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Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology

Title
Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology
Author(s)
Lee, Hee HoJo, Sung-HyunBae, MyunghanChoi, Byung-SooKim, JeongyeobLyu, Hong-KunShin, Jang-Kyoo
Issued Date
2015-01
Citation
Sensors and Materials, v.27, no.1, pp.135 - 142
Type
Article
Author Keywords
High sensitivityMetal gridWavelength selectivityGate/body-tied MOSFET-type photodetector
ISSN
0914-4935
Abstract
In this research, a highly sensitive gate/body-tied metal-oxide-semiconductor field-effect transistor (MOSFET)-type photodetector with a wavelength-selective metal grid structure was designed and fabricated using 0.18-m standard complementary metal-oxide-semiconductor technology. This device is composed of a floating gate that is tied to a well and a wavelength-selective metal grid is placed on top of each photodetector. The designed metal grid structure included one-dimensional and two-dimensional patterned metal layers. The amplified photocurrent of the gate/body-tied MOSFET-type photodetector was found to be more than 1000-fold that of a conventional n+/p-sub photodiode with the same area. To demonstrate the wavelength selectivity, we measured the drain current and transmittance of the photodetector as a function of wavelength.
URI
http://hdl.handle.net/20.500.11750/2134
DOI
10.18494/SAM.2015.1079
Publisher
M Y U Scientific Publishing Division
Related Researcher
  • 류홍근 Lyu, Hong-Kun
  • Research Interests Image-based AI application;Real-time AI system;AI-AMR System;AI farming machinery
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