Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeon, Jaeho | - |
dc.contributor.author | Lee, Jinhee | - |
dc.contributor.author | Yoo, Gwangwe | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.contributor.author | Jang, Yun Hee | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.date.available | 2017-07-05T08:47:37Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2313 | - |
dc.description.abstract | We report the CVD synthesis of a monolayer of MoS2 nanoparticles such that the nanoparticle size was controlled over the range 5-100 nm and the chemical potential of sulfur was modified, both by controlling the hydrogen flow rate during the CVD process. As the hydrogen flow rate was increased, the reaction process of sulfur changed from a "sulfiding" process to a "sulfo-reductive" process, resulting in the growth of smaller MoS2 nanoparticles on the substrates. The size control, crystalline quality, chemical configuration, and distribution uniformity of the CVD-grown monolayer MoS2 nanoparticles were confirmed. The growth of the MoS2 nanoparticles at different edge states was studied using density functional theory calculations to clarify the size-tunable mechanism. A non-volatile memory device fabricated using the CVD-grown size-controlled 5 nm monolayer MoS2 nanoparticles as a floating gate showed a good memory window of 5-8 V and an excellent retention period of a decade. © 2016 The Royal Society of Chemistry. | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c6nr04456e | - |
dc.identifier.scopusid | 2-s2.0-84989336881 | - |
dc.identifier.bibliographicCitation | Nanoscale, v.8, no.38, pp.16995 - 17003 | - |
dc.subject.keywordPlus | ACTIVE EDGE SITES | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordPlus | Chemical Configuration | - |
dc.subject.keywordPlus | Chemical Vapor Deposition | - |
dc.subject.keywordPlus | Crystalline Quality | - |
dc.subject.keywordPlus | Data Storage Equipment | - |
dc.subject.keywordPlus | Density Functional Theory | - |
dc.subject.keywordPlus | Digital Storage | - |
dc.subject.keywordPlus | Distribution Uniformity | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | Floating Gates | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | Hydrogen Flow Rate | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | Molybdenum Compounds | - |
dc.subject.keywordPlus | Monolayers | - |
dc.subject.keywordPlus | Nanoclusters | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | Nanoparticle Sizes | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | Non-Volatile Memory Technology | - |
dc.subject.keywordPlus | Nonvolatile Storage | - |
dc.subject.keywordPlus | Quality Control | - |
dc.subject.keywordPlus | Quantum Dots | - |
dc.subject.keywordPlus | Reaction Process | - |
dc.subject.keywordPlus | SULFUR | - |
dc.subject.keywordPlus | Synthesis (Chemical) | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.citation.endPage | 17003 | - |
dc.citation.number | 38 | - |
dc.citation.startPage | 16995 | - |
dc.citation.title | Nanoscale | - |
dc.citation.volume | 8 | - |
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