DGIST Scholar: Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices

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Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices

Title: Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices

Author(s): Kwon, Jaehyuk ; Na, Hanah ; Palai, Akshaya K. ; Kumar, Amit ; Jeong, Uijin ; Cho, Sungwoo ; Pyo, Seungmoon

Author Keywords: Diketopyrrolopyrrole ; Organic semiconductor ; Organic field-effect transistor ; Polymeric gate dielectric ; Organic electronic devices

Keywords: Atomic Force Microscopy ; CIRCUITS ; Copolymers ; CORE ; DESIGN ; Different Substrates ; Diketopyrrolopyrrole ; Diketopyrrolopyrroles ; Electric Inverters ; Electrical Response ; Electron Devices ; ELECTRONIC DEVICES ; Fabrication ; FIELD-EFFECT TRANSISTORS ; Field Effect Semiconductor Devices ; Field Effect Transistors ; Function of Time ; Gate Dielectrics ; LOW-BAND-GAP ; Material Performance ; MOBILITY ; OLIGOTHIOPHENE DERIVATIVES ; Organic Electronic Devices ; Organic Field-Effect Transistor ; Organic Field Effect Transistors ; Organic Semiconductor ; Polymer Gate Insulator ; Polymeric Gate Dielectric ; Polymers ; Resistance Load ; Semiconducting Organic Compounds ; Semiconducting Polymers ; Semiconductor Devices ; SOLAR-CELLS ; Thin Films ; TRANSISTORS ; X Ray Diffraction

Abstract: Abstract Simply alkylated diketopyrrolopyrrole (DPP-C12) (-C12 = -C12H25) core has been synthesized and the opto/electrochemical properties are reported. The DPP-C12 can be utilized as a p-channel material in organic devices such as field-effect transistors, resistance load and complementary-type inverters. Both inorganic (OTS-treated SiO2) and polymeric gate insulators were employed in the fabrication of top-contact bottom-gate organic field-effect transistors with DPP-C12 thin-film. Devices are fabricated at different substrate temperatures and the material performance in device was structurally analyzed using atomic force microscope (AFM) and X-ray diffraction (XRD). The DPP-C12 thin-film OFET devices fabricated at Ts = 90 °C with the polymer gate insulator showed the best performance and the static and dynamic stability was evaluated as a function of time. In addition, the resistance load- and complementary-type inverters using the DPP-C12 thin-film OFET were constructed, and the static and dynamic electrical responses are analyzed in detail. © 2015 Elsevier B.V.