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1. Journal Articles
Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices
Kwon, Jaehyuk
;
Na, Hanah
;
Palai, Akshaya K.
;
Kumar, Amit
;
Jeong, Uijin
;
Cho, Sungwoo
;
Pyo, Seungmoon
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Title
Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices
Issued Date
2015-11
Citation
Synthetic Metals, v.209, pp.240 - 246
Type
Article
Author Keywords
Diketopyrrolopyrrole
;
Organic semiconductor
;
Organic field-effect transistor
;
Polymeric gate dielectric
;
Organic electronic devices
Keywords
Atomic Force Microscopy
;
CIRCUITS
;
Copolymers
;
CORE
;
DESIGN
;
Different Substrates
;
Diketopyrrolopyrrole
;
Diketopyrrolopyrroles
;
Electric Inverters
;
Electrical Response
;
Electron Devices
;
ELECTRONIC DEVICES
;
Fabrication
;
FIELD-EFFECT TRANSISTORS
;
Field Effect Semiconductor Devices
;
Field Effect Transistors
;
Function of Time
;
Gate Dielectrics
;
LOW-BAND-GAP
;
Material Performance
;
MOBILITY
;
OLIGOTHIOPHENE DERIVATIVES
;
Organic Electronic Devices
;
Organic Field-Effect Transistor
;
Organic Field Effect Transistors
;
Organic Semiconductor
;
Polymer Gate Insulator
;
Polymeric Gate Dielectric
;
Polymers
;
Resistance Load
;
Semiconducting Organic Compounds
;
Semiconducting Polymers
;
Semiconductor Devices
;
SOLAR-CELLS
;
Thin Films
;
TRANSISTORS
;
X Ray Diffraction
ISSN
0379-6779
Abstract
Abstract Simply alkylated diketopyrrolopyrrole (DPP-C12) (-C12 = -C
12
H
25
) core has been synthesized and the opto/electrochemical properties are reported. The DPP-C12 can be utilized as a p-channel material in organic devices such as field-effect transistors, resistance load and complementary-type inverters. Both inorganic (OTS-treated SiO
2
) and polymeric gate insulators were employed in the fabrication of top-contact bottom-gate organic field-effect transistors with DPP-C12 thin-film. Devices are fabricated at different substrate temperatures and the material performance in device was structurally analyzed using atomic force microscope (AFM) and X-ray diffraction (XRD). The DPP-C12 thin-film OFET devices fabricated at T
s
= 90 °C with the polymer gate insulator showed the best performance and the static and dynamic stability was evaluated as a function of time. In addition, the resistance load- and complementary-type inverters using the DPP-C12 thin-film OFET were constructed, and the static and dynamic electrical responses are analyzed in detail. © 2015 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/2325
DOI
10.1016/j.synthmet.2015.07.015
Publisher
Elsevier
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