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Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices

Title
Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices
Author(s)
Kwon, J[Kwon, Jaehyuk]Na, H[Na, Hanah]Palai, AK[Palai, Akshaya K.]Kumar, A[Kumar, Amit]Jeong, U[Jeong, Uijin]Cho, S[Cho, Sungwoo]Pyo, S[Pyo, Seungmoon]
DGIST Authors
Cho, S[Cho, Sungwoo]
Issued Date
2015-11
Type
Article
Article Type
Article
Subject
Atomic Force MicroscopyDifferent SubstratesDiketopyrrolopyrroleDiketopyrrolopyrrolesElectric InvertersElectrical ResponseElectron DevicesFabricationField Effect Semiconductor DevicesField Effect TransistorsFunction of TimeGate DielectricsMaterial PerformanceOrganic Electronic DevicesOrganic Field-Effect Transistor (OFETs)Organic Field-Effect TransistorsOrganic SemiconductorPolymer Gate InsulatorPolymeric Gate DielectricPolymersResistance LoadSemiconducting Organic CompoundsSemiconducting PolymersSemiconductor DevicesThin-FilmsTransistorsX Ray Diffraction
ISSN
0379-6779
Abstract
Abstract Simply alkylated diketopyrrolopyrrole (DPP-C12) (-C12 = -C12H25) core has been synthesized and the opto/electrochemical properties are reported. The DPP-C12 can be utilized as a p-channel material in organic devices such as field-effect transistors, resistance load and complementary-type inverters. Both inorganic (OTS-treated SiO2) and polymeric gate insulators were employed in the fabrication of top-contact bottom-gate organic field-effect transistors with DPP-C12 thin-film. Devices are fabricated at different substrate temperatures and the material performance in device was structurally analyzed using atomic force microscope (AFM) and X-ray diffraction (XRD). The DPP-C12 thin-film OFET devices fabricated at Ts = 90 °C with the polymer gate insulator showed the best performance and the static and dynamic stability was evaluated as a function of time. In addition, the resistance load- and complementary-type inverters using the DPP-C12 thin-film OFET were constructed, and the static and dynamic electrical responses are analyzed in detail. © 2015 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/2325
DOI
10.1016/j.synthmet.2015.07.015
Publisher
Elsevier
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