Cited 46 time in
Cited 44 time in
Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation
- Title
- Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation
- Authors
- Yun, Won Seok; Lee, J. D.
- DGIST Authors
- Lee, J. D.
- Issue Date
- 2015-02
- Citation
- Journal of Physical Chemistry C, 119(5), 2822-2827
- Type
- Article
- Article Type
- Article
- ISSN
- 1932-7447
- Abstract
- We investigate the strain-induced electronic and magnetic properties of single-layer (1L) MoS2 with vacancy defects using the density functional theory calculation. When the tensile strain is applied, 1L-MoS2 with vacancy becomes ferromagnetic and metallic. We elucidate that, from the electronic band structure of vacancy-defect-doped 1L-MoS2, the impurity bands inside the gap play a role of seed to drive novel magnetic and electronic properties as the strain increases. In particular, we also find that 1L-MoS2 with two-sulfur vacancy (V2S) shows the largest magnetic moment at ∼14% strain among various vacancy types and undergoes a spin reorientation transition from out-of-plane to in-plane magnetization at ∼13% strain. This implies that the strain-manipulated 1L-MoS2 with V2S can be a promising candidate for new spintronic applications. © 2015 American Chemical Society.
- URI
- http://hdl.handle.net/20.500.11750/2351
- DOI
- 10.1021/jp510308a
- Publisher
- American Chemical Society
- Related Researcher
-
-
Lee, JaeDong
Light and Matter Theory Laboratory
-
Research Interests
Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
- Files:
There are no files associated with this item.
- Collection:
- Department of Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.