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Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy

Title
Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
Author(s)
Aspetti, Carlos O.Cho, Chang-HeeAgarwal, RahulAgarwal, Ritesh
Issued Date
2014-09
Citation
Nano Letters, v.14, no.9, pp.5413 - 5422
Type
Article
Author Keywords
Siliconplasmonicsphotonicsluminescence
Keywords
POLAR PHONON-SCATTERINGRAMAN-SCATTERINGLIGHT-EMISSIONSEMICONDUCTORRECOMBINATIONCONFINEMENTDYNAMICSNANOWIRESINGLEFILM
ISSN
1530-6984
Abstract
By integrating silicon nanowires (∼150 nm diameter, 20 μm length) with an ω-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process. © 2014 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/2380
DOI
10.1021/nl502606q
Publisher
American Chemical Society
Related Researcher
  • 조창희 Cho, Chang-Hee
  • Research Interests Semiconductor; Nanophotonics; Light-Matter Interaction
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Appears in Collections:
Department of Physics and Chemistry Future Semiconductor Nanophotonics Laboratory 1. Journal Articles

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