Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Dong Hwan | - |
dc.contributor.author | Kwon, In Hye | - |
dc.contributor.author | Kim, Cham | - |
dc.contributor.author | Han, Byungchan | - |
dc.contributor.author | Im, Hee-Joong | - |
dc.contributor.author | Kim, Hoyoung | - |
dc.date.available | 2017-07-05T08:57:28Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2013-01-25 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2440 | - |
dc.description.abstract | A tellurium evaporation annealing method has been investigated to control the carrier concentration of sintered (Bi,Sb)2Te3 compounds. Hot-pressed (Bi,Sb)2Te3 bulk alloys and tellurium powders located in an evacuated ampoule, were heated to 673 K and held for 3, 12 and 48 h. The crystal structure and chemical composition in the annealed specimens were preserved, while the carrier concentrations were varied between 1.53 × 1019 and 2.57 × 1019 cm -3, and the thermal conductivity at 300 K ranged between 1.20 and 1.25 W m-1 K-1. The figure of merit at 300 K was enhanced from 0.86 to 1.06 when the specimens were annealed for 3 h. To identify the underlying mechanism, we utilized ab initio density functional theory calculations. These computations indicated that a Te ad-layer on top of the Bi2Te3 energetically favors bulk Bi atoms to migrate to the surface. Our experimental measurements and the first-principles validations consistently indicate that the tellurium evaporation annealing method is a novel process for enhancing the thermoelectric performance of Bi-Te compounds by controlling their carrier concentrations, which is particularly useful in dealing with nano-scale composites. © 2012 Elsevier B.V. All rights reserved. | - |
dc.publisher | Elsevier | - |
dc.title | Tellurium-evaporation-annealing for p-type bismuth-antimony-telluride thermoelectric materials | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jallcom.2012.08.130 | - |
dc.identifier.scopusid | 2-s2.0-84867236699 | - |
dc.identifier.bibliographicCitation | Journal of Alloys and Compounds, v.548, pp.126 - 132 | - |
dc.subject.keywordAuthor | Thermoelectric | - |
dc.subject.keywordAuthor | Carrier concentration | - |
dc.subject.keywordAuthor | Bismuth antimony telluride | - |
dc.subject.keywordAuthor | Anti-site defect | - |
dc.subject.keywordAuthor | Density functional theory | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | SURFACE-TENSION | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.citation.endPage | 132 | - |
dc.citation.startPage | 126 | - |
dc.citation.title | Journal of Alloys and Compounds | - |
dc.citation.volume | 548 | - |
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