Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

Abstract

The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous Al Ox served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1 V and an on/off ratio of ∼ 106 operated as a n -type enhancement mode with saturation mobility of 0.53 cm2 V s. The devices showed optical transmittance about 80% in the visible range. © 2007 American Institute of Physics.