Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Meixner, Philipp | - |
| dc.contributor.author | Lim, Seong Joon | - |
| dc.contributor.author | Park, Joonbum | - |
| dc.contributor.author | Kim, Jun Sung | - |
| dc.contributor.author | Fischer, Saskia F. | - |
| dc.contributor.author | Seo, Jungpil | - |
| dc.contributor.author | Kuk, Young | - |
| dc.date.available | 2017-07-11T05:36:54Z | - |
| dc.date.created | 2017-04-10 | - |
| dc.date.issued | 2016-01-15 | - |
| dc.identifier.issn | 0169-4332 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/2738 | - |
| dc.description.abstract | While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi2Te1.95Se1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C. © 2015 Elsevier B.V. All rights reserved. | - |
| dc.publisher | Elsevier B.V. | - |
| dc.title | Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05 | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.apsusc.2015.11.163 | - |
| dc.identifier.scopusid | 2-s2.0-84952360200 | - |
| dc.identifier.bibliographicCitation | Applied Surface Science, v.361, pp.185 - 189 | - |
| dc.subject.keywordAuthor | Scanning tunneling microscopy | - |
| dc.subject.keywordAuthor | Topological insulators | - |
| dc.subject.keywordAuthor | Niobium | - |
| dc.subject.keywordAuthor | Bi2Te2Se | - |
| dc.subject.keywordPlus | Annealing Temperatures | - |
| dc.subject.keywordPlus | Bi2Te2Se | - |
| dc.subject.keywordPlus | DEPOSITION | - |
| dc.subject.keywordPlus | Electric Insulators | - |
| dc.subject.keywordPlus | High Energy Electron Beams | - |
| dc.subject.keywordPlus | Layer-by-Layer Growth | - |
| dc.subject.keywordPlus | Monolayers | - |
| dc.subject.keywordPlus | N-Type Doping | - |
| dc.subject.keywordPlus | Niobium | - |
| dc.subject.keywordPlus | Scanning Tunneling Microscopy | - |
| dc.subject.keywordPlus | Scanning Tunneling Microscopy and Spectroscopy | - |
| dc.subject.keywordPlus | Sub-Monolayers | - |
| dc.subject.keywordPlus | Superconductivity | - |
| dc.subject.keywordPlus | SURFACE-STATES | - |
| dc.subject.keywordPlus | TemPERATURE | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | Threedimensional (3-D) | - |
| dc.subject.keywordPlus | Topological Insulators | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | Transition Metals | - |
| dc.citation.endPage | 189 | - |
| dc.citation.startPage | 185 | - |
| dc.citation.title | Applied Surface Science | - |
| dc.citation.volume | 361 | - |
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