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dc.contributor.author Yun, Won Seok -
dc.contributor.author Lee, J. D. -
dc.date.available 2017-07-11T05:41:54Z -
dc.date.created 2017-04-10 -
dc.date.issued 2016-12 -
dc.identifier.issn 1463-9076 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/2790 -
dc.description.abstract For the practical device application of the two-dimensional semiconducting MoS2, it is a critical issue to manipulate the electronic and magnetic properties locally at its contact to the metal electrode. For the tuning of those properties, we have proposed the vacancy-defective 1L-MoS2 or the hydrogenated 1L-MoS2 at the metal [Co(0001) or Ni(111)] contacts and performed first-principles electronic structure calculations. By controlling the atomic vacancy defects and the hydrogen coverages, we investigate the Schottky barrier heights and charge and spin transfers at the interface. Our findings provide a physical insight into the practical device design using the two-dimensional MoS2. © the Owner Societies 2016. -
dc.language English -
dc.publisher Royal Society of Chemistry -
dc.title Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation -
dc.type Article -
dc.identifier.doi 10.1039/c6cp05384j -
dc.identifier.scopusid 2-s2.0-84996566995 -
dc.identifier.bibliographicCitation Physical Chemistry Chemical Physics, v.18, no.45, pp.31027 - 31032 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus CONTACTS -
dc.subject.keywordPlus MONOLAYER MOS2 -
dc.subject.keywordPlus TRANSISTORS -
dc.citation.endPage 31032 -
dc.citation.number 45 -
dc.citation.startPage 31027 -
dc.citation.title Physical Chemistry Chemical Physics -
dc.citation.volume 18 -
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Appears in Collections:
Department of Physics and Chemistry Light and Matter Theory Laboratory 1. Journal Articles
Division of Nanotechnology 1. Journal Articles

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