DGIST Scholar: Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer

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Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer

Title: Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer

Author(s): Lee, H[Lee, Hyungjin] ; Lee, D[Lee, Donghwa] ; Ahn, Y[Ahn, Yumi] ; Lee, EW[Lee, Eun-Woo] ; Park, LS[Park, Lee Soon] ; Lee, Y[Lee, Youngu]

DGIST Authors: Lee, H[Lee, Hyungjin] ; Lee, D[Lee, Donghwa] ; Ahn, Y[Ahn, Yumi] ; Lee, Y[Lee, Youngu]

Subject: Device Characteristics ; Device Performance ; Electric Resistance Measurement ; Electron Injection ; Hole Injection Layers ; Light-Emitting Diodes ; Low Turn-On Voltages ; Mechanical Flexibility ; Organic Light-Emitting Diodes (OLEDs) ; Plastic Substrates ; Transparent Conducting Electrodes

Abstract: Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A -1 and 35.8 lm W-1). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance. This journal is © the Partner Organisations 2014.