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dc.contributor.author Palai, Akshaya Kumar -
dc.contributor.author Kim, Sangwook -
dc.contributor.author Shim, Hyunseok -
dc.contributor.author Cho, Sungwoo -
dc.contributor.author Kumar, Amit -
dc.contributor.author Kwon, Jaehyuk -
dc.contributor.author Park, Seung-Un -
dc.contributor.author Pyo, Seungmoon -
dc.date.available 2017-07-11T06:29:41Z -
dc.date.created 2017-04-10 -
dc.date.issued 2014-08 -
dc.identifier.issn 2046-2069 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3156 -
dc.description.abstract We report n-type small aromatic core diimide derivatives functionalized with electron donating heteroaromatic ring bearing moieties, N,N′-bis[2-(2-thienyl)ethyl]-benzene-1,2,4,5-tetracarboxylic diimide and N,N′-bis[2-(2-thienyl)ethyl]-napthalene-1,4,5,8-tetracarboxylic diimide. The synthesis, and characterization of the newly synthesized diimide based organic semiconductors and electrical responses in electronic devices are investigated in detail. The structure, and electrochemical and optical properties of the diimide derivatives were determined using 1H NMR, 13C NMR, mass spectrometry, UV-visible spectroscopy and cyclic voltammetry. The electron density distribution of the materials was also studied using density functional theory calculations to relate the structure and device's characteristics. The materials were employed for the preparation of organic thin-film transistors with inorganic and polymeric gate dielectrics at various substrate temperatures, and the device's electrical characteristics have been analyzed in detail. We also further explore its applicability in advanced electronic devices by fabricating a resistance load-type organic inverter, and the dynamic response behavior was investigated. This journal is © the Partner Organisations 2014. -
dc.language English -
dc.publisher Royal Society of Chemistry -
dc.title n-Type small aromatic core diimides flanked with electron donating thienylethyl moieties and electrical responses in organic devices -
dc.type Article -
dc.identifier.doi 10.1039/c4ra06012a -
dc.identifier.scopusid 2-s2.0-84907164384 -
dc.identifier.bibliographicCitation RSC Advances, v.4, no.78, pp.41476 - 41482 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus THIN-FILM TRANSISTORS -
dc.subject.keywordPlus HIGH-PERFORMANCE -
dc.subject.keywordPlus NAPHTHALENE DIIMIDES -
dc.subject.keywordPlus CHARGE-TRANSPORT -
dc.subject.keywordPlus MATERIALS DESIGN -
dc.subject.keywordPlus SMALL MOLECULES -
dc.subject.keywordPlus HIGH-MOBILITY -
dc.subject.keywordPlus SEMICONDUCTORS -
dc.subject.keywordPlus DERIVATIVES -
dc.citation.endPage 41482 -
dc.citation.number 78 -
dc.citation.startPage 41476 -
dc.citation.title RSC Advances -
dc.citation.volume 4 -
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