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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Doh, Chil-Hoon | - |
| dc.contributor.author | Oh, Min-Wook | - |
| dc.contributor.author | Han, Byung-Chan | - |
| dc.date.available | 2017-07-11T06:34:28Z | - |
| dc.date.created | 2017-04-10 | - |
| dc.date.issued | 2013-08 | - |
| dc.identifier.issn | 0970-7077 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3215 | - |
| dc.description.abstract | Using first principles density functional theory, formation energies of lithium silicides were calculated. The formation of lithium silicides such as Li1Si1, Li12Si7, Li 2Si1, Li7Si2, Li15Si 4 and Li22Si5 were energetically favourable with potential decreasing. Li15Si4 calculated to be more stable than Li7Si2. Differences of Si-Si bond distances between 2.383 å of Li3.5Si as relatively good reversible range and 4.548 å of Li3.75Si as relatively low reversibility can be correlated to reversible lithiation range. Silicon is not only electron semi-conductor but also not good lithium ion conductor. Therefore during lithiation(delithiation) silicon has multi-level lithiated silicides to show broad and complicated XRD pattern. | - |
| dc.language | English | - |
| dc.publisher | Chemic Publishing Co. | - |
| dc.title | Lithium Alloying Potentials of Silicon as Anode of Lithium Secondary Batteries | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.14233/ajchem.2013.OH78 | - |
| dc.identifier.scopusid | 2-s2.0-84880076765 | - |
| dc.identifier.bibliographicCitation | Doh, Chil-Hoon. (2013-08). Lithium Alloying Potentials of Silicon as Anode of Lithium Secondary Batteries. Asian Journal of Chemistry, 25(10), 5739–5743. doi: 10.14233/ajchem.2013.OH78 | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.subject.keywordAuthor | Lithium battery | - |
| dc.subject.keywordAuthor | Anode | - |
| dc.subject.keywordAuthor | Silicides | - |
| dc.subject.keywordAuthor | First principle | - |
| dc.subject.keywordAuthor | Vienna ab initio simulation package | - |
| dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | INSERTION | - |
| dc.citation.endPage | 5743 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 5739 | - |
| dc.citation.title | Asian Journal of Chemistry | - |
| dc.citation.volume | 25 | - |