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High operating voltage application of transparent a-InGaZnO thin-film transistors

Title
High operating voltage application of transparent a-InGaZnO thin-film transistors
Author(s)
Jeong, JaewookLee, Gwang JunKim, JoonwooKim, Jung-HyeChoi, Byeongdae
Issued Date
2013-02
Citation
Semiconductor Science and Technology, v.28, no.2
Type
Article
ISSN
0268-1242
Abstract
We demonstrate high operating voltage transparent thin-film transistors (HVTTFTs) using amorphous InGaZnO (a-IGZO) active layers by introducing a high resistance bulk region in the source/drain electrodes. The HVTTFTs are operated at above VDS = 100 V with a high on/off current ratio and a good subthreshold slope. The electrical characteristics of the HVTTFTs were dominantly affected by Schottky contact resistance for small off-set length, and bulk resistance for large off-set length, indicating that optimization of the off-set length is a key factor to realize high performance HVTTFTs. © 2013 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/3265
DOI
10.1088/0268-1242/28/2/025015
Publisher
Institute of Physics Publishing
Related Researcher
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Division of Nanotechnology 1. Journal Articles
Division of AI, Big data and Block chain 1. Journal Articles

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