Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Jung-Hye | - |
dc.contributor.author | Kim, Joonwoo | - |
dc.contributor.author | Lee, Gwang Jun | - |
dc.contributor.author | Jeong, Jaewook | - |
dc.contributor.author | Choi, Byeongdae | - |
dc.date.available | 2017-07-11T06:38:19Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2013-01-01 | - |
dc.identifier.issn | 1542-1406 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3271 | - |
dc.description.abstract | We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm2/Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3A/A, and a subthreshold swing of 7.02 V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes. © 2013 Copyright Taylor and Francis Group, LLC. | - |
dc.publisher | Taylor and Francis Ltd. | - |
dc.title | Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1080/15421406.2013.853531 | - |
dc.identifier.scopusid | 2-s2.0-84892746827 | - |
dc.identifier.bibliographicCitation | Molecular Crystals and Liquid Crystals, v.586, no.1, pp.161 - 167 | - |
dc.subject.keywordAuthor | a-IGZO | - |
dc.subject.keywordAuthor | screen printing | - |
dc.subject.keywordAuthor | copper ink | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | source/drain electrodes | - |
dc.subject.keywordAuthor | oxide-based TFTs | - |
dc.citation.endPage | 167 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 161 | - |
dc.citation.title | Molecular Crystals and Liquid Crystals | - |
dc.citation.volume | 586 | - |
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