Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Oh, BY[Oh, Byeong-Yun] | ko |
dc.contributor.author | Han, JW[Han, Jin-Woo] | ko |
dc.contributor.author | Seo, DS[Seo, Dae-Shik] | ko |
dc.contributor.author | Kim, KY[Kim, Kwang-Young] | ko |
dc.contributor.author | Baek, SH[Baek, Seong-Ho] | ko |
dc.contributor.author | Jang, HS[Jang, Hwan Soo] | ko |
dc.contributor.author | Kim, JH[Kim, Jae Hyun] | ko |
dc.date.available | 2017-07-11T06:54:51Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, v.12, no.7, pp.5330 - 5335 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3358 | - |
dc.description.abstract | We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al film with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation © 2012 American Scientific Publishers. | - |
dc.publisher | American Scientific Publishers | - |
dc.subject | 3-Dimensional | - |
dc.subject | Al-Concentration | - |
dc.subject | Al-Doped Zinc Oxide | - |
dc.subject | Al-Doped ZnO | - |
dc.subject | Aluminum | - |
dc.subject | Atomic Layer Deposition | - |
dc.subject | Band Gap Energy | - |
dc.subject | Conformal Deposition | - |
dc.subject | Diffraction Peaks | - |
dc.subject | Electric Conductivity | - |
dc.subject | Electrical Resistivity | - |
dc.subject | Electronic Device | - |
dc.subject | II-VI Semiconductor | - |
dc.subject | Layer-by-Layer Growth | - |
dc.subject | Merit Values | - |
dc.subject | Nanowires | - |
dc.subject | Optical Characteristics | - |
dc.subject | Photovoltaic Devices | - |
dc.subject | Silicon Nanowire Photovoltaic Device | - |
dc.subject | Silicon Nanowires | - |
dc.subject | Sputtering Methods | - |
dc.subject | Surface Chemical Reactions | - |
dc.subject | Surface Passivation | - |
dc.subject | Transparent Electrode | - |
dc.subject | Zinc Oxide | - |
dc.subject | Zinc Oxide II-VI Semiconductors | - |
dc.subject | ZnO | - |
dc.title | Characteristics of Al-Doped ZnO Films Grown by Atomic Layer Deposition for Silicon Nanowire Photovoltaic Device | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2012.6255 | - |
dc.identifier.wosid | 000307604700035 | - |
dc.identifier.scopusid | 2-s2.0-84865120281 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Oh, BY[Oh, Byeong-Yun] | - |
dc.contributor.nonIdAuthor | Han, JW[Han, Jin-Woo] | - |
dc.contributor.nonIdAuthor | Seo, DS[Seo, Dae-Shik] | - |
dc.contributor.nonIdAuthor | Kim, KY[Kim, Kwang-Young] | - |
dc.identifier.citationVolume | 12 | - |
dc.identifier.citationNumber | 7 | - |
dc.identifier.citationStartPage | 5330 | - |
dc.identifier.citationEndPage | 5335 | - |
dc.identifier.citationTitle | Journal of Nanoscience and Nanotechnology | - |
dc.type.journalArticle | Article | - |
dc.contributor.affiliatedAuthor | Baek, SH[Baek, Seong-Ho] | - |
dc.contributor.affiliatedAuthor | Jang, HS[Jang, Hwan Soo] | - |
dc.contributor.affiliatedAuthor | Kim, JH[Kim, Jae Hyun] | - |
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