Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeong, J[Jeong, Jaewook] | ko |
dc.contributor.author | Kim, J[Kim, Joonwoo] | ko |
dc.contributor.author | Lee, GJ[Lee, Gwang Jun] | ko |
dc.contributor.author | Choi, BD[Choi, Byeong-Dae] | ko |
dc.date.available | 2017-07-11T06:57:08Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012-01-09 | - |
dc.identifier.citation | Applied Physics Letters, v.100, no.2 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3391 | - |
dc.description.abstract | We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ FEi) and parasitic resistance in source (R s) and drain (R d) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs. © 2012 American Institute of Physics. | - |
dc.publisher | American Institute of Physics Publishing | - |
dc.subject | Amorphous Films | - |
dc.subject | Amorphous Semiconductors | - |
dc.subject | Back Channels | - |
dc.subject | Electrical Characteristic | - |
dc.subject | Field-Effect Mobilities | - |
dc.subject | Non-Uniformity | - |
dc.subject | Parameter Extraction | - |
dc.subject | Parasitic Resistances | - |
dc.subject | Probes | - |
dc.subject | Separate Analysis | - |
dc.subject | Thin-Film Transistors (TFTs) | - |
dc.subject | Transistors | - |
dc.title | Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3675876 | - |
dc.identifier.wosid | 000299126800086 | - |
dc.identifier.scopusid | 2-s2.0-84862909074 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.citationVolume | 100 | - |
dc.identifier.citationNumber | 2 | - |
dc.identifier.citationTitle | Applied Physics Letters | - |
dc.type.journalArticle | Article | - |
dc.contributor.affiliatedAuthor | Jeong, J[Jeong, Jaewook] | - |
dc.contributor.affiliatedAuthor | Kim, J[Kim, Joonwoo] | - |
dc.contributor.affiliatedAuthor | Lee, GJ[Lee, Gwang Jun] | - |
dc.contributor.affiliatedAuthor | Choi, BD[Choi, Byeong-Dae] | - |
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