Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeong, J. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Lee, G. J. | - |
dc.contributor.author | Choi, B. -D. | - |
dc.date.available | 2017-07-11T07:01:02Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2011-11-10 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3428 | - |
dc.description.abstract | The effects of back channel interfacial states (N bit) that can be generated by passivation layer deposition for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) by using an ATLAS 2D device simulator are analysed. As N bit is increased, the positive shift of threshold voltage (V TH) is observed for thin and thick active layer TFTs due to the acceptor-like characteristics of interfacial states. However, as N bit is further increased, the V TH shift of the thick active layer TFT is eventually saturated, while that of the thin active layer TFT is continuously increased. This is because the characteristics of the a-IGZO TFT with a thin active layer are strongly affected by N bit, which can be used for optimising the performance of a-IGZO TFTs. © 2011 The Institution of Engineering and Technology. | - |
dc.publisher | Institution of Engineering and Technology | - |
dc.title | Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1049/el.2011.2024 | - |
dc.identifier.wosid | 000296796300026 | - |
dc.identifier.scopusid | 2-s2.0-81255136508 | - |
dc.identifier.bibliographicCitation | Electronics Letters, v.47, no.23, pp.1295 - 1297 | - |
dc.subject.keywordPlus | Active Layer | - |
dc.subject.keywordPlus | Amorphous Films | - |
dc.subject.keywordPlus | ATLAS 2D | - |
dc.subject.keywordPlus | Back Channels | - |
dc.subject.keywordPlus | Device Simulators | - |
dc.subject.keywordPlus | Gallium | - |
dc.subject.keywordPlus | Indium | - |
dc.subject.keywordPlus | Indium Gallium Zinc Oxides | - |
dc.subject.keywordPlus | Interfacial State | - |
dc.subject.keywordPlus | Numerical Analysis | - |
dc.subject.keywordPlus | Passivation Layer | - |
dc.subject.keywordPlus | Positive Shift | - |
dc.subject.keywordPlus | Semiconducting Indium Compounds | - |
dc.subject.keywordPlus | Thin Film Transistors | - |
dc.subject.keywordPlus | Zinc Oxide | - |
dc.citation.endPage | 1297 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 1295 | - |
dc.citation.title | Electronics Letters | - |
dc.citation.volume | 47 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.type.docType | Article | - |
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