Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Seong, Nak-Jin | - |
dc.contributor.author | Jung, Hyun-June | - |
dc.contributor.author | Yoon, Soon-Gil | - |
dc.date.available | 2017-07-11T07:04:11Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3456 | - |
dc.description.abstract | Bismuth-metal nanocrystals (NCs) are self-embedded within high-k Bi 2Mg 2/3Nb 4/3O 7 (BMNO) dielectrics grown at room temperature by rf magnetron sputtering were demonstrated for the low-voltage nonvolatile memory device. The BMNO pyrochlore films grown in Ar/O 2 ambient at room temperature showed the stable dielectric properties, together with high dielectric constant (∼45), small dielectric loss (0.2%), and improved leakage current. Bismuth nanocrystals (a mean size of 2-3 nm) and a high-k BMNO films (∼50 nm thickness) as a control oxide layer were continuously in situ formed at room temperature in Ar and Ar/O 2 ambient, respectively. A significant threshold voltage shift of 0.95 V is observed at a gate voltage of 5 V and the threshold voltage shift linearly increases with increasing gate voltage from 3 to 6 V. The self-embedded bismuth nanocrystals in high-k BMNO dielectrics at room temperature represent a viable candidate for low-voltage NFGM device applications. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.publisher | Wiley Blackwell | - |
dc.title | Bismuth-metal nanocrystals self-embedded in high-k Bi-based pyrochlore dielectrics grown at room temperature | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssa.201026226 | - |
dc.identifier.wosid | 000289513700033 | - |
dc.identifier.scopusid | 2-s2.0-79954427558 | - |
dc.identifier.bibliographicCitation | Physica Status Solidi A: Applications and Materials Science, v.208, no.4, pp.932 - 936 | - |
dc.subject.keywordAuthor | bismuth | - |
dc.subject.keywordAuthor | floating-gate memories | - |
dc.subject.keywordAuthor | high-k dielectrics | - |
dc.subject.keywordAuthor | nanocrystals | - |
dc.subject.keywordAuthor | niobates | - |
dc.subject.keywordAuthor | pyrochlore | - |
dc.subject.keywordPlus | Bi-Based | - |
dc.subject.keywordPlus | Bismuth | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | Device Application | - |
dc.subject.keywordPlus | Dielectric Losses | - |
dc.subject.keywordPlus | Dielectric Materials | - |
dc.subject.keywordPlus | Floating-Gate Memories | - |
dc.subject.keywordPlus | Gate Dielectrics | - |
dc.subject.keywordPlus | Gate Voltages | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | High-K Dielectrics | - |
dc.subject.keywordPlus | High Dielectric Constants | - |
dc.subject.keywordPlus | In-Situ | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | Low-Voltage | - |
dc.subject.keywordPlus | Magnetron Sputtering | - |
dc.subject.keywordPlus | Mean Size | - |
dc.subject.keywordPlus | Metal Nanocrystals | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | Niobates | - |
dc.subject.keywordPlus | Niobium | - |
dc.subject.keywordPlus | Niobium Compounds | - |
dc.subject.keywordPlus | NONVOLATILE MemORY APPLICATION | - |
dc.subject.keywordPlus | Non-Volatile Memory Technology | - |
dc.subject.keywordPlus | Nonvolatile Storage | - |
dc.subject.keywordPlus | Oxide Films | - |
dc.subject.keywordPlus | Oxide Layer | - |
dc.subject.keywordPlus | Pyrochlore | - |
dc.subject.keywordPlus | Pyrochlore Films | - |
dc.subject.keywordPlus | Pyrochlores | - |
dc.subject.keywordPlus | RF-Magnetron Sputtering | - |
dc.subject.keywordPlus | Room Temperature | - |
dc.subject.keywordPlus | SILICON DIOXIDE | - |
dc.subject.keywordPlus | Threshold Voltage | - |
dc.subject.keywordPlus | Threshold Voltage Shifts | - |
dc.subject.keywordPlus | TUNGSTEN NANOCRYSTALS | - |
dc.citation.endPage | 936 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 932 | - |
dc.citation.title | Physica Status Solidi A: Applications and Materials Science | - |
dc.citation.volume | 208 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.type.docType | Article | - |
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