Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Eom, Tae-Kwang | - |
dc.contributor.author | Sari, Windu | - |
dc.contributor.author | Choi, Kyu-Jeong | - |
dc.contributor.author | Shin, Woong-Chul | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.contributor.author | Sohn, Hyunchul | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.available | 2017-07-11T07:16:06Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2009 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3555 | - |
dc.description.abstract | Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1). © 2009 The Electrochemical Society. | - |
dc.publisher | Electrochemical Society | - |
dc.title | Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2 | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/1.3207867 | - |
dc.identifier.wosid | 000269723600009 | - |
dc.identifier.scopusid | 2-s2.0-70249123822 | - |
dc.identifier.bibliographicCitation | Electrochemical and Solid State Letters, v.12, no.11, pp.D85 - D88 | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | metallic thin films | - |
dc.subject.keywordAuthor | nucleation | - |
dc.subject.keywordAuthor | ruthenium | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordPlus | Step Coverage | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Titanium Nitride | - |
dc.subject.keywordPlus | Toluene | - |
dc.subject.keywordPlus | Transmission Electron | - |
dc.subject.keywordPlus | Transmission Electron Microscopy | - |
dc.subject.keywordPlus | Aspect Ratio | - |
dc.subject.keywordPlus | Atomic Layer Deposition | - |
dc.subject.keywordPlus | Contact Holes | - |
dc.subject.keywordPlus | Cyclohexadienes | - |
dc.subject.keywordPlus | Cyclopentadienyls | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | Electrode | - |
dc.subject.keywordPlus | High Aspect Ratio | - |
dc.subject.keywordPlus | Low Temperatures | - |
dc.subject.keywordPlus | Metallic Thin Films | - |
dc.subject.keywordPlus | Methylbenzenes | - |
dc.subject.keywordPlus | Nucleation | - |
dc.subject.keywordPlus | Olefins | - |
dc.subject.keywordPlus | Organometallics | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | Oxygen | - |
dc.subject.keywordPlus | Ru Film | - |
dc.subject.keywordPlus | Ru Thin Films | - |
dc.subject.keywordPlus | Ruthenium | - |
dc.subject.keywordPlus | Silicon Compounds | - |
dc.citation.endPage | D88 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | D85 | - |
dc.citation.title | Electrochemical and Solid State Letters | - |
dc.citation.volume | 12 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.type.docType | Article | - |
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