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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kwon, Soon-Il | - |
| dc.contributor.author | You, Sung-Won | - |
| dc.contributor.author | Shon, Young-Soo | - |
| dc.contributor.author | Cho, Yong-Soo | - |
| dc.contributor.author | Park, Byung-Nam | - |
| dc.contributor.author | Choi, Sie-Young | - |
| dc.date.available | 2017-07-11T07:20:23Z | - |
| dc.date.created | 2017-04-10 | - |
| dc.date.issued | 2006-09 | - |
| dc.identifier.citation | Microelectronics, v.37, no.9, pp.993 - 996 | - |
| dc.identifier.issn | 0026-2692 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3598 | - |
| dc.description.abstract | The field emission characteristics of an oxidized porous polysilicon (OPPS) were investigated with Pt/Ti multilayer electrode using the electrochemical oxidation (ECO) process. A Pt/Ti multilayer electrode, using ECO, showed highly efficient and stable electron emission characteristics; moreover, it can be applied to large area of a glass substrate with a low temperature process. Electron emission characteristics were improved with O2 annealing at 600 °C after the ECO process. It was found that forming a high quality oxide layer from the ECO-formed SiO2 was crucial in improving electron emission characteristics. The Pt/Ti OPPS field emitter, which was annealed at 600 °C for 5 h, showed an efficiency of 3.81% at Vps = 14 V . © 2006 Elsevier Ltd. All rights reserved. | - |
| dc.language | English | - |
| dc.publisher | Mackintosh Publications | - |
| dc.title | Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.mejo.2006.02.001 | - |
| dc.identifier.wosid | 000240290100024 | - |
| dc.identifier.scopusid | 2-s2.0-33745988950 | - |
| dc.type.local | Article(Overseas) | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | Kwon, Soon-Il. (2006-09). Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process. doi: 10.1016/j.mejo.2006.02.001 | - |
| dc.description.journalClass | 1 | - |
| dc.citation.publicationname | Microelectronics | - |
| dc.contributor.nonIdAuthor | Kwon, Soon-Il | - |
| dc.contributor.nonIdAuthor | You, Sung-Won | - |
| dc.contributor.nonIdAuthor | Cho, Yong-Soo | - |
| dc.contributor.nonIdAuthor | Park, Byung-Nam | - |
| dc.contributor.nonIdAuthor | Choi, Sie-Young | - |
| dc.identifier.citationVolume | 37 | - |
| dc.identifier.citationNumber | 9 | - |
| dc.identifier.citationStartPage | 993 | - |
| dc.identifier.citationEndPage | 996 | - |
| dc.identifier.citationTitle | Microelectronics | - |
| dc.type.journalArticle | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.subject.keywordAuthor | electrochemical oxidation (ECO) | - |
| dc.subject.keywordAuthor | field emission | - |
| dc.subject.keywordAuthor | porous polysilicon | - |
| dc.subject.keywordAuthor | O-2 annealing | - |
| dc.contributor.affiliatedAuthor | Kwon, Soon-Il | - |
| dc.contributor.affiliatedAuthor | You, Sung-Won | - |
| dc.contributor.affiliatedAuthor | Shon, Young-Soo | - |
| dc.contributor.affiliatedAuthor | Cho, Yong-Soo | - |
| dc.contributor.affiliatedAuthor | Park, Byung-Nam | - |
| dc.contributor.affiliatedAuthor | Choi, Sie-Young | - |
