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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Hee Won | - |
| dc.contributor.author | Lee, Hee Jun | - |
| dc.contributor.author | Kim, Hwang Ju | - |
| dc.contributor.author | Lee, Dong Hoon | - |
| dc.contributor.author | Park, Mi Seon | - |
| dc.contributor.author | Jang, Yeon Suk | - |
| dc.contributor.author | Lee, Won Jae | - |
| dc.contributor.author | Yeo, Im Gyu | - |
| dc.contributor.author | Chun, Myong Chuel | - |
| dc.contributor.author | Lee, Si Hyun | - |
| dc.contributor.author | Kim, Jung Gon | - |
| dc.date.available | 2017-07-11T07:32:02Z | - |
| dc.date.created | 2017-05-08 | - |
| dc.date.issued | 2016 | - |
| dc.identifier.isbn | 9780000000000 | - |
| dc.identifier.issn | 0255-5476 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3619 | - |
| dc.description.abstract | The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in PG inserted crucible showed the lower intensity of Al, B and Ti impurity concentration than SiC crystal grown in conventional crucible. The PG plate before and after the growth process has been investigated by a Raman spectroscopy and a photoluminescence spectrum (PL). According to the analysis result, it was confirmed that the porous graphite plate had the effect of suppressing impurities supplied to SiC single crystal during the growth process. © 2016 Trans Tech Publications, Switzerland. | - |
| dc.publisher | Trans Tech Publications Ltd | - |
| dc.relation.ispartof | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 | - |
| dc.title | The role of porous graphite plate for high quality SiC crystal growth by PVT method | - |
| dc.type | Conference Paper | - |
| dc.identifier.doi | 10.4028/www.scientific.net/MSF.858.113 | - |
| dc.identifier.scopusid | 2-s2.0-84971574665 | - |
| dc.identifier.bibliographicCitation | Shin, Hee Won. (2016). The role of porous graphite plate for high quality SiC crystal growth by PVT method. 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 858, 113–116. doi: 10.4028/www.scientific.net/MSF.858.113 | - |
| dc.citation.conferenceDate | 2015-10-04 | - |
| dc.citation.conferencePlace | SZ | - |
| dc.citation.endPage | 116 | - |
| dc.citation.startPage | 113 | - |
| dc.citation.title | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 | - |
| dc.citation.volume | 858 | - |
| dc.type.docType | Conference Paper | - |
