Department of Physics and Chemistry
Future Semiconductor Nanophotonics Laboratory
2. Conference Papers
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, H.-J. | - |
| dc.contributor.author | Lee, H.-T. | - |
| dc.contributor.author | Shin, H.-W. | - |
| dc.contributor.author | Park, M.-S. | - |
| dc.contributor.author | Jang, Y.-S. | - |
| dc.contributor.author | Lee, W.-J. | - |
| dc.contributor.author | Yeo, I.-G. | - |
| dc.contributor.author | Eun, T.-H. | - |
| dc.contributor.author | Kim, J.-Y. | - |
| dc.contributor.author | Chun, M.-C. | - |
| dc.contributor.author | Lee, S.-H. | - |
| dc.contributor.author | Kim, J.-G. | - |
| dc.date.available | 2017-07-11T07:39:59Z | - |
| dc.date.created | 2017-05-08 | - |
| dc.date.issued | 2015 | - |
| dc.identifier.isbn | 9780000000000 | - |
| dc.identifier.issn | 0255-5476 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3708 | - |
| dc.description.abstract | The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a more C-rich for the polytype stability of 4H-SiC crystal and a uniform radial temperature gradient. The dendrite structure obtained from SiC source powder in the crucible with porous graphite plate was more densely formed than that in the conventional crucible. The crystal quality of 4H-SiC single crystals grown in porous graphite inserted crucible was revealed to be better than that of crystal grown SiC crystals in the conventional crucible. © (2015) Trans Tech Publications, Switzerland. | - |
| dc.publisher | Trans Tech Publications Ltd | - |
| dc.relation.ispartof | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 | - |
| dc.title | Effect of porous graphite for high quality SiC crystal growth by PVT method | - |
| dc.type | Conference Paper | - |
| dc.identifier.doi | 10.4028/www.scientific.net/MSF.821-823.43 | - |
| dc.identifier.scopusid | 2-s2.0-84950308556 | - |
| dc.identifier.bibliographicCitation | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, v.821-823, pp.43 - 46 | - |
| dc.citation.conferenceDate | 2014-09-21 | - |
| dc.citation.conferencePlace | SZ | - |
| dc.citation.endPage | 46 | - |
| dc.citation.startPage | 43 | - |
| dc.citation.title | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 | - |
| dc.citation.volume | 821-823 | - |
| dc.type.docType | Conference Paper | - |
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