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dc.contributor.authorHyun, Cheol-Minko
dc.contributor.authorChoi, Jeong-Hunko
dc.contributor.authorLee, Myoung-Jaeko
dc.contributor.authorAhn, Ji-Hoonko
dc.date.available2017-08-10T08:19:22Z-
dc.date.created2017-08-09-
dc.date.created2017-08-09-
dc.date.created2017-08-09-
dc.date.created2017-08-09-
dc.date.issued2017-06-
dc.identifier.citationApplied Physics Letters, v.111, no.1, pp.013104-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/20.500.11750/4270-
dc.description.abstractThe photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 ��V/K, which is 3.5 times larger than that of its bulk counterpart. ? 2017 Author(s).-
dc.languageEnglish-
dc.publisherAmerican Institute of Physics Inc.-
dc.titlePhoto-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure-
dc.typeArticle-
dc.identifier.doi10.1063/1.4992115-
dc.identifier.wosid000405083600032-
dc.identifier.scopusid2-s2.0-85022196813-
dc.type.localArticle(Overseas)-
dc.type.rimsART-
dc.description.journalClass1-
dc.contributor.localauthorLee, Myoung-Jae-
dc.contributor.nonIdAuthorHyun, Cheol-Min-
dc.contributor.nonIdAuthorChoi, Jeong-Hun-
dc.contributor.nonIdAuthorAhn, Ji-Hoon-
dc.identifier.citationVolume111-
dc.identifier.citationNumber1-
dc.identifier.citationStartPage013104-
dc.identifier.citationTitleApplied Physics Letters-
dc.type.journalArticleArticle-
dc.description.isOpenAccessN-


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