Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Chang-Hee | - |
dc.contributor.author | Kang, Jang-Won | - |
dc.contributor.author | Park, Il-Kyu | - |
dc.contributor.author | Park, Seong-Ju | - |
dc.date.available | 2017-10-06T08:22:53Z | - |
dc.date.created | 2017-10-06 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/4564 | - |
dc.description.abstract | Here, we report that the tensile strain in silicon nanocrystals embedded in silicon nitride significantly changes the size-dependent evolution of the conduction and valence energy levels, compared with strain-free silicon nanocrystals. Using capacitance spectroscopy, the quantum-confined energy shifts in the conduction and valence levels were identified as ΔEC(eV) = 11.7/d2, and ΔEV(eV) = −4.5/d2, where d is the mean diameter of the silicon nanocrystals in nanometers. These findings indicated that the tensile strain in the silicon nanocrystals significantly increased the quantum confinement, by a factor of 3.3 in the conduction levels, and by a factor of 1.8 in the valence levels. © 2017 Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | 한국물리학회 | - |
dc.title | Enhanced quantum confinement in tensile-strained silicon nanocrystals embedded in silicon nitride | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cap.2017.09.005 | - |
dc.identifier.wosid | 000414807400007 | - |
dc.identifier.scopusid | 2-s2.0-85029352782 | - |
dc.identifier.bibliographicCitation | Current Applied Physics, v.17, no.12, pp.1616 - 1621 | - |
dc.identifier.kciid | ART002284963 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | Quantum confinement | - |
dc.subject.keywordAuthor | Semiconductor nanocrystal | - |
dc.subject.keywordAuthor | Tensile strain | - |
dc.subject.keywordAuthor | Capacitance spectroscopy | - |
dc.subject.keywordPlus | SI NANOCRYSTALS | - |
dc.subject.keywordPlus | ELECTRONIC STATES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | POROUS SILICON | - |
dc.subject.keywordPlus | DOTS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.citation.endPage | 1621 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1616 | - |
dc.citation.title | Current Applied Physics | - |
dc.citation.volume | 17 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.type.docType | Article | - |
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