Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Mudusu, Devika | - |
dc.contributor.author | Nandanapalli, Koteeswara R. | - |
dc.contributor.author | Dugasani, Sreekantha R. | - |
dc.contributor.author | Kang, Jang-Won | - |
dc.contributor.author | Park, Sung-Ha | - |
dc.contributor.author | Tu, Charles W. | - |
dc.date.available | 2017-10-16T04:23:51Z | - |
dc.date.created | 2017-10-16 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/4605 | - |
dc.description.abstract | This article reports the electrical characteristics of pristine, polycrystalline and single crystalline nickel (Ni) layer capped zinc oxide (ZnO) nanowires. Core/shell ZnO/Ni nanostructures were developed using chemical vapor deposition and e-beam evaporation, and the structures were annealed at different temperatures. Field effect transistor (FET) devices were fabricated using photolithography and investigated their characteristics at room temperature. All FET devices exhibited depletion-mode characteristics with n-type conductivity. However, single-crystalline Ni shelled ZnO nanowires based FET devices showed a high on/off ratio and transconductance, as compared to other devices. The overall measurements show that though the ZnO nanowires capped with Ni layer, their electrical properties remain same as pristine ZnO nanowires. © 2017 Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | Elsevier B.V. | - |
dc.title | Electrical properties of polycrystalline and single crystalline nickel layer capped ZnO nanowires | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cap.2017.09.002 | - |
dc.identifier.wosid | 000414807400015 | - |
dc.identifier.scopusid | 2-s2.0-85030125081 | - |
dc.identifier.bibliographicCitation | Current Applied Physics, v.17, no.12, pp.1699 - 1706 | - |
dc.identifier.kciid | ART002284971 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | Functionalized ZnO nanowires | - |
dc.subject.keywordAuthor | MOSFET devices | - |
dc.subject.keywordAuthor | Photoanodes for PEC devices | - |
dc.subject.keywordAuthor | Vapor-liquid-solid process | - |
dc.subject.keywordAuthor | ZnO/Ni core/shell nanowires | - |
dc.subject.keywordPlus | FIELD-EFFECT-TRANSISTORS | - |
dc.subject.keywordPlus | LIGHT-EMITTING DIODE | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HFO2 FILMS | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.citation.endPage | 1706 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1699 | - |
dc.citation.title | Current Applied Physics | - |
dc.citation.volume | 17 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.type.docType | Article | - |
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