Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kwon, Yonghyun Albert | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Jo, Sae Byeok | - |
dc.contributor.author | Roe, Dong Gue | - |
dc.contributor.author | Rhee, Dongjoon | - |
dc.contributor.author | Song, Younguk | - |
dc.contributor.author | Kang, Byoungwoo | - |
dc.contributor.author | Kim, Dohun | - |
dc.contributor.author | Kim, Jeongmin | - |
dc.contributor.author | Kim, Dae Woo | - |
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Kang, Joohoon | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.date.accessioned | 2023-07-12T14:10:21Z | - |
dc.date.available | 2023-07-12T14:10:21Z | - |
dc.date.created | 2023-07-05 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.issn | 2520-1131 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/46137 | - |
dc.description.abstract | Two-dimensional materials made via solution processing could be used to create next-generation electronic devices at scale. However, existing solution processing methods typically have a trade-off between scalability and material quality, which makes them unsuitable for practical applications. Here we show that wafer-scale arrays of molybdenum-disulfide-based transistors can be fabricated using a commercial slot-die printing process. We create inks of molybdenum disulfide nanosheets and sodium-embedded alumina for printing of the semiconductor and gate dielectric layer, respectively. The transistors exhibit average charge carrier mobilities of 80.0 cm2 V−1 s−1 in field-effect transistor measurements and 132.9 cm2 V−1 s−1 in Hall measurements at room temperature. The high charge carrier mobility is attributed to the sodium-embedded alumina gate dielectric, which causes a band-like charge carrier transport in the molybdenum-disulfide-nanosheet-based thin-film networks. We use the transistors to create various logic gates, including NOT, NOR, NAND and static random-access memory. © 2023, The Author(s), under exclusive licence to Springer Nature Limited. | - |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Wafer-scale transistor arrays fabricated using slot-die printing of molybdenum disulfide and sodium-embedded alumina | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41928-023-00971-7 | - |
dc.identifier.wosid | 001003229900001 | - |
dc.identifier.scopusid | 2-s2.0-85161365517 | - |
dc.identifier.bibliographicCitation | Nature Electronics, v.6, no.6, pp.443 - 450 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GEL | - |
dc.citation.endPage | 450 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 443 | - |
dc.citation.title | Nature Electronics | - |
dc.citation.volume | 6 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.type.docType | Article | - |
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