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dc.contributor.advisor 이재동 -
dc.contributor.author Su Yeong Lee -
dc.date.accessioned 2023-09-18T21:00:51Z -
dc.date.available 2023-09-18T21:00:51Z -
dc.date.issued 2023 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/46412 -
dc.identifier.uri http://dgist.dcollection.net/common/orgView/200000686230 -
dc.description First principle calculation; Dark exciton; 2D materials; Shottky barrier height; Black phosphorus; MoS2 -
dc.description.tableofcontents I. INTRODUCTION 1
1.1 Density Functional Theory 1
1.1.1 Hohenberg Kohn Theorem 1
1.1.2 Kohn-Sham equation 4
1.2 Exchange correlation functionals 6
1.2.1 The local-density approximation (LDA) 7
1.2.2 Generalized gradient approximation (GGA) 9
1.3 Energy band Theory 10
1.3.1 Bloch's Theorem 10
1.3.2 The Brillouin zone 11
1.4 2D Materials 14
1.4.1 An Introduction to Two-Dimensional Materials 14
1.4.2 Types and Basic Properties of Two-Dimensional Semiconductor Materials 17
II. Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts 22
2.1 Introduction 22
2.2 Method 28
2.2.1 Density Functional Theory Calculation 28
2.2.2 The band unfolding technique 30
2.3 Results and Discussion 32
2.3.1 New Method to Determine Schottky Barrier 32
2.3.2 Few-Layer BP - Ti Contact System 33
2.3.3 Few-Layer BP - Sc Contact System 38
2.3.4 Few-layer BP - Al contact system 40
2.3.5 Schottky barrier height calculation using the Schottky-Mott rule 42
2.4 Conclusion 44
III. Electronic and transport properties of black phosphorus encapsulated in between h-BN layer 46
3.1 Introduction 46
3.2 Method 48
3.2.1 Carrier mobility formula 48
3.2.2 Computational Method 50
3.3 Results and Discussion 51
3.3.1 Mobility calculation of pristine BP 51
3.3.2 Mobility calculation of BN/BP/BN heterostructure 54
3.4 Conclusion 60
IV. Strain-induced dark exciton generation in rippled monolayer MoS2 62
4.1 Introduction 62
4.2 Method 66
4.3 Results and Discussion 68
4.4 Conclusion 78
References 80
요약문 92
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dc.format.extent 92 -
dc.language eng -
dc.publisher DGIST -
dc.title Electronic and transport properties of two dimensional semiconductors -
dc.type Thesis -
dc.identifier.doi 10.22677/THESIS.200000686230 -
dc.description.degree Doctor -
dc.contributor.department Department of Physics and Chemistry -
dc.contributor.coadvisor Hyunmin Kim -
dc.date.awarded 2023-08-01 -
dc.publisher.location Daegu -
dc.description.database dCollection -
dc.citation XT.MD 이56 202308 -
dc.date.accepted 2023-09-14 -
dc.contributor.alternativeDepartment 화학물리학과 -
dc.subject.keyword First principle calculation -
dc.subject.keyword Dark exciton -
dc.subject.keyword 2D materials -
dc.subject.keyword Shottky barrier height -
dc.subject.keyword Black phosphorus -
dc.subject.keyword MoS2 -
dc.contributor.affiliatedAuthor Su Yeong Lee -
dc.contributor.affiliatedAuthor JaeDong Lee -
dc.contributor.affiliatedAuthor Hyunmin Kim -
dc.contributor.alternativeName 이수영 -
dc.contributor.alternativeName JaeDong Lee -
dc.contributor.alternativeName 김현민 -
dc.rights.embargoReleaseDate 2028-08-31 -
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