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dc.contributor.author Kim, Soyun -
dc.contributor.author Hong, Jeonghoon -
dc.contributor.author Watanabe, Kenji -
dc.contributor.author Taniguchi, Takashi -
dc.contributor.author Falson, Joseph -
dc.contributor.author Kim, Jeongwoo -
dc.contributor.author Kim, Youngwook -
dc.date.accessioned 2023-12-13T10:40:20Z -
dc.date.available 2023-12-13T10:40:20Z -
dc.date.created 2023-11-10 -
dc.date.issued 2023-10 -
dc.identifier.issn 0003-6951 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/46641 -
dc.description.abstract We report the transport properties of α-RuCl3/bilayer graphene heterostructures, where carrier doping is induced by a work function difference, resulting in distinct electron and hole populations in α-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant band modifications within the system. In particular, we observe the emergence of spin and valley-polarized multiple hole-type Fermi pockets, originating from the spin-selective band hybridization between α-RuCl3 and bilayer graphene, breaking the spin degree of freedom. Unlike the α-RuCl3/monolayer graphene system, the presence of different hybridization strengths between α-RuCl3 and the top and bottom graphene layers leads to an asymmetric behavior of the two layers, confirmed by effective mass experiments, resulting in the manifestation of valley-polarized Fermi pockets. These compelling findings establish α-RuCl3 proximitized to bilayer graphene as an outstanding platform for engineering its unique low-energy band structure. © 2023 Author(s). -
dc.language English -
dc.publisher American Institute of Physics Inc. -
dc.title Spin and valley-polarized multiple Fermi surfaces of α-RuCl3/bilayer graphene heterostructure -
dc.type Article -
dc.identifier.doi 10.1063/5.0170810 -
dc.identifier.wosid 001095984400011 -
dc.identifier.scopusid 2-s2.0-85175234499 -
dc.identifier.bibliographicCitation Applied Physics Letters, v.123, no.17 -
dc.description.isOpenAccess FALSE -
dc.citation.number 17 -
dc.citation.title Applied Physics Letters -
dc.citation.volume 123 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Physics -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.type.docType Article -
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Department of Physics and Chemistry Topological Quantum Device Lab 1. Journal Articles

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