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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Kee-Jeong | - |
| dc.date.accessioned | 2023-12-26T21:44:17Z | - |
| dc.date.available | 2023-12-26T21:44:17Z | - |
| dc.date.created | 2014-11-17 | - |
| dc.date.issued | 2013-11-15 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/47383 | - |
| dc.language | English | - |
| dc.publisher | KIEEME | - |
| dc.title | Leakage Current and Threshold Voltage Characteristics of a-Si:H TFTs through Depending on Processing Conditions | - |
| dc.type | Conference Paper | - |
| dc.identifier.bibliographicCitation | Yang, Kee-Jeong. (2013-11-15). Leakage Current and Threshold Voltage Characteristics of a-Si:H TFTs through Depending on Processing Conditions. ICAE 2013. | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | 제주 ICC | - |
| dc.citation.title | ICAE 2013 | - |
