Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Rabeel, Muhammad | - |
dc.contributor.author | Kim, Honggyun | - |
dc.contributor.author | Khan, Muhammad Asghar | - |
dc.contributor.author | Abubakr, Muhammad | - |
dc.contributor.author | Ahmad, Ibtisam | - |
dc.contributor.author | Ahmad, Muneeb | - |
dc.contributor.author | Rehman, Shania | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Khan, Muhammad Farooq | - |
dc.contributor.author | Kim, Deok-Kee | - |
dc.date.accessioned | 2024-01-03T21:40:12Z | - |
dc.date.available | 2024-01-03T21:40:12Z | - |
dc.date.created | 2024-01-02 | - |
dc.date.issued | 2023-11 | - |
dc.identifier.issn | 2330-4022 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/47533 | - |
dc.description.abstract | The implications of atomically thin-layered two-dimensional (2D) materials for electrical, optical, and flexible applications have great potential for a new-generation technology. Here, we successfully fabricated a flexible and lateral homojunction photodiode using a single molybdenum ditelluride (MoTe2) flake with varying thicknesses (thin-thick). The gate voltage manipulation allowed a significant separation of photocarriers and created a built-in field at the interface, resulting in broadband photodetection from ultraviolet to near-infrared wavelengths. The study found that thin-MoTe2 and thick-MoTe2 act as strongly p- and n-type semiconductors, respectively. The effect of bromine (Br) on the MoTe2 surface showed efficient p-type doping on thin-MoTe2, leading to an improved current rectification ratio. The rectification ratio of the pristine device (1.18 × 103) increased by the order of 102 after bromine adsorption (4.66 × 105) at Vg = −20 V. The gate-tunable photodetection of the lateral homojunction MoTe2 diode demonstrated remarkable photoresponsivity (58.4 AW-1), external quantum efficiency (19,840.95%), and detectivity (2.53 × 1011 Jones). We also successfully demonstrated the fabrication of the homojunction MoTe2 photodiode on a flexible substrate, holding promise for wearable medical optoelectronic devices. Performance evaluation under different bending radii showed slightly reduced responsivity (25.4 AW-1) compared to that of the flat surface (27.3 AW-1). Thus, this research presents an intriguing approach for high-performance and flexible photodetectors based on MoTe2 lateral homojunctions, with potential applications in optoelectronics and future wearable technology. © 2023 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Broadband and Flexible Photodiode of a Bromine-Doped Lateral MoTe2 Homojunction | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsphotonics.3c01281 | - |
dc.identifier.scopusid | 2-s2.0-85179778297 | - |
dc.identifier.bibliographicCitation | ACS Photonics, v.10, no.12, pp.4425 - 4436 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | photodetectors | - |
dc.subject.keywordAuthor | broadband | - |
dc.subject.keywordAuthor | flexible | - |
dc.subject.keywordAuthor | MoTe2 | - |
dc.subject.keywordAuthor | homojunction | - |
dc.citation.endPage | 4436 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 4425 | - |
dc.citation.title | ACS Photonics | - |
dc.citation.volume | 10 | - |
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