Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Ha, Youngkyoung | - |
dc.contributor.author | Jeon, Jingyeong | - |
dc.contributor.author | Hwang, Subhin | - |
dc.contributor.author | MacManus-Driscoll, Judith L. | - |
dc.contributor.author | Lee, Shinbuhm | - |
dc.date.accessioned | 2024-02-03T00:10:41Z | - |
dc.date.available | 2024-02-03T00:10:41Z | - |
dc.date.created | 2023-12-18 | - |
dc.date.issued | 2023-12 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/47741 | - |
dc.description.abstract | Transparent conductors with electromagnetic shielding capabilities (TC-EMS) are rare, despite their significant potential for creating new functionalities in energy and military applications. Here, we investigate the potential of La-doped BaSnO3 (BLSO) for TC-EMS since its epitaxial film has been known to have low sheet resistance and high visible transmittance. However, films grown on industrially practical Al2O3 substrates exhibit a sheet resistance three orders of magnitude higher than that of reported films grown on perovskites. Here, this problem is addressed by templating a BaZrO3/MgO bilayer on (0001)-oriented Al2O3 substrates to yield single-crystalline BLSO epitaxial films. The absence of grain boundaries in the epitaxial films minimizes the electron scattering. Due to the affirmative correlation between the conductivity and crystallinity, 5% La doping is optimal among the 5−20% La concentrations studied; these 480-nm-thick films have the highest crystallinity and the lowest sheet resistances of ~28 Ω ▯−1; this value is similar to that of single-crystalline levels. Due to their very high transmittances (~82% in a range 400−1000 nm) and effective X-band electromagnetic shielding (~18.6 dB), the BLSO epitaxial films grown on Al2O3 have great potential to be used for inexpensive TC-EMS applications. © 2023, The Author(s). | - |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.title | BaZrO3/MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba0.95La0.05SnO3 films on Al2O3 substrates, with very high transparency and X-band electromagnetic shielding | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41427-023-00512-w | - |
dc.identifier.scopusid | 2-s2.0-85178188521 | - |
dc.identifier.bibliographicCitation | NPG Asia Materials, v.15, no.1 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.citation.number | 1 | - |
dc.citation.title | NPG Asia Materials | - |
dc.citation.volume | 15 | - |