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Manipulating Magnetism through Voltage-Induced Oxygen Ion Migrations

Title
Manipulating Magnetism through Voltage-Induced Oxygen Ion Migrations
Author(s)
Tran Xuan Bao
DGIST Authors
Tran Xuan BaoJung-Il HongChun-Yeol You
Advisor
홍정일
Co-Advisor(s)
Chun-Yeol You
Issued Date
2024
Awarded Date
2024-02-01
Type
Thesis
Description
voltage control of magnetism; magnetic anisotropy; skyrmion; RKKY interactions; interface.
Abstract
In the field of spintronics and nanomagnetic devices, Voltage Control of Magnetism (VCM) emerges as a promising technique for the energy-efficient regulation of material magnetism. This research delves into VCM within thin magnetic films, concentrating on the voltage effect that controls oxygen ion motion and consequently modifies the oxidation level at interfaces in multilayer magnetic film structures. The study begins by exploring the reversible transition between perpendicular magnetic anisotropy (PMA) and in-plane magnetic anisotropy (IMA) in Co layers within Pt/Co/Gd/GdOx/Pt multilayer structures, facilitated by bidirectional oxygen ion migrations. Moreover, this study unveils a mechanism to manipulate magnetic domains, thereby enabling the formation of skyrmions without the prerequisite of an in-plane external bias field and thermal assistance, exploiting the robust control over magnetic anisotropy at room temperature. To tackle the inherent challenge of VCM - the incapacity of the electric field to provide adequate torques for magnetization reversal in ferromagnetic materials - the research also explores electric field control of oxygen ions within a synthesized antiferromagnetic (sAFM) structure. Manipulating oxygen ions at interfaces allows for the manipulation of RKKY interactions, enabling reversible transitions between antiferromagnetic (AFM) and ferromagnetic (FM) orders of FM layers at room temperature. This mechanism permits the reversal of the magnetic moment direction of one of the two ferromagnetic layers in the sAFM structure without requiring an external magnetic field. Overall, this study provides a modest contribution to the extant understanding of voltage-controlled magnetism in multilayer thin films and gently advances the potential of energy-efficient spintronic devices.|본 논문은 스핀트로닉스 및 나노자기 장치 분야에서 자기의 전압 제어 (VCM)가 자료의 자기를 에너지 효율적으로 조절하는 유망한 기술로 부상함을 조사하였다. 연구는 얇은 자기 필름 내의 VCM에 대해 깊이 탐구하며, 다중 층 자기 필름 구조 내 계면에서의 산화 수준을 조정하는 산소 이온 운동을 제어하는 전압 효과에 중점을 둔다.
연구는 양방향 산소 이온 이동을 통해 Pt/Co/Gd/GdOx/Pt 다중층 구조 내의 Co 층에서 수직 자기 이방성 (PMA)과 평면 자기 이방성 (IMA) 사이의 가역적 전환을 탐구하는 것으로 시작된다. 또한, 상온에서 자기 이방성에 대한 견고한 제어를 활용하여 외부 바이어스 필드와 열 지원의 전제 조건 없이 스커미온을 형성할 수 있게 하는 자기 도메인 조작 메커니즘을 발견하였다.
VCM의 본질적인 도전인 강자성 재료에서의 자화 반전에 필요한 충분한 토크를 전기장이 제공할 수 없는 문제를 해결하기 위해, 연구는 합성 반강자성 (sAFM) 구조 내에서 산소 이온의 전기장 제어를 탐구하였다. 계면에서 산소 이온을 조작하여 RKKY 상호작용을 조절함으로써, FM 층의 반강자성 (AFM)과 강자성 (FM) 정렬 사이의 가역적인 전환을 상온에서 가능하게 하였다. 이 메커니즘을 통해 외부 자기장 없이 sAFM 구조의 두 강자성 층 중 하나의 자기 모멘트 방향을 반전시킬 수 있다.
총괄하여, 이 연구는 다중층 박막에서의 전압 제어 자기에 대한 현존하는 이해에 소박한 기여를 제공하며 에너지 효율적인 스피트로닉 장치의 가능성을 향상시키는데 기여할 것이다.
Table Of Contents
ABSTRACT i
List of Content ii
List of Figures v
List of Tables xi

I. INTRODUCTION 1
II. BACKGROUND 4
2.1 Magnetic Anisotropy 4
2.2 Perpendicular Magnetic Anisotropy 5
2.3 Magnetic Hysteresis Loops 7
2.4 Domain walls 10
2.5 Dzyaloshinskii–Moriya Interaction (DMI) 13
2.6 Magnetic skyrmions 16
2.7 Ruderman-Kittel-Kasuya-Yosida (RKKY) 18
2.8 Voltage control magnetism (VCM) 20
III. EXPERIMENTAL METHODS 25
3.1 Sample Fabrication 25
3.2 Sample Characterization 31
IV. Voltage-Controlled Adjustment of Magnetic Anisotropy and Optimized Skyrmion
Generations 43
4.1 Overview 43
4.2 Experimental detail 44
4.3 Structure characterization 45
4.4 Magnetic Properties of As-Deposited sample 46
4.5 Control of Magnetic Anisotropy via Voltage-Driven O2- Migrations in the GdOx Layer
47
4.6 The transformation of the chemical composition of the Co top interface under the
effect of voltage 50
4.7 Asymmetric Time-Dependent MA Change under Negative and Positive Voltage Bias 51
4.8 Manipulation of Magnetic Domains by Voltage 56
4.9 Voltage-Assisted Formation of Magnetic Skyrmions 58
4.10 Determination of the type of the generated magnetic bubbles 62
4.11 Microscopic mechanism of skyrmion generation 63
4.12 Conclusion 64
V. Field-Free Control and Switching of Perpendicular Magnetization by Voltage Induced
Manipulation of RKKY Interaction 65
5.1 Overview 65
5.2 Analysis of RKKY Interactions and Exchange Bias in Ru-Spaced Heterostructures 67
5.3 Magnetic properties of the individual samples containing only the top-FM or bottom-
FM 70
5.4 Voltage Tuning of RKKY Interaction 72
5.5 Natural oxidation processes in multilayers 75
5.6 Voltage-Induced Perpendicular Magnetization Reversal in RKKY Multilayers 77
5.7 Conclusion 79
VI. Summary and outlook 80
6.1 Summary 80
6.2 Outlook 81
6.3 Concluding Remarks 84
References 85
URI
http://hdl.handle.net/20.500.11750/48047

http://dgist.dcollection.net/common/orgView/200000723891
DOI
10.22677/THESIS.200000723891
Degree
Doctor
Department
Department of Physics and Chemistry
Publisher
DGIST
Related Researcher
  • 홍정일 Hong, Jung-Il
  • Research Interests Electric and Magnetic Properties of Nanostructured Materials; Spintronics
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Department of Physics and Chemistry Theses Ph.D.

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