Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Khan, Firoz | - |
dc.contributor.author | Baek, Seong-Ho | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.date.accessioned | 2018-01-25T01:05:45Z | - |
dc.date.available | 2018-01-25T01:05:45Z | - |
dc.date.created | 2017-08-09 | - |
dc.date.issued | 2017-06-30 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5001 | - |
dc.description.abstract | High quality Al-doped ZnO (AZO) films are advantageous for many applications. Their properties can be tuned by controlling the doping concentration and intrinsic defect density. In this work, high-quality AZO films have been synthesized using the atomic layer deposition (ALD) technique. Throughout the doping cycle and post-annealing treatments under various atmospheres, the oxygen-related vacancies were controlled. The effect of oxygen vacancies on the charge transportation and surface potential were studied. The O 1s X-ray photoelectron spectrometry (XPS) spectra of the AZO film were deconvoluted into three components related to the O2− species, corresponding to the oxygen in the ZnO lattice (OL); oxygen vacancies or defects (OV); and chemisorbed or dissociated (OC) oxygen species. In the case of the as-deposited films and films annealed under various atmospheres, a co-relationship between the OV and mobility (μ) can be determined. In the case of the N2-annealed film, the OV fraction is at its maximum value, while the other components are at their minimum values. Among the as-deposited films, the maximum OV fraction is obtained when a Al:Zn ratio (RAl/Zn) of 7% is used. When RAl/Zn=7%, the μ value of the as-deposited AZO film is enhanced from 12.1cm2V−1s−1 (RAl/Zn=3%), to 18.5cm2V−1s−1. It shows its potential application as photoanode. The Hall Effect and the XPS analysis of the film reviled a co-relationship between OV and μ with the Al-doping concentration or post annealing atmosphere. Kelvin probe atomic force microscopy (KPFM) was used to evaluate the surface charge potentials of the films. The N2-annealed AZO film with RAl/Zn=3% (AZO-3-N2) exhibited the maximum negative potential (−115.79mV); however, the film with RAl/Zn=7% (AZO-7-N2) exhibited the maximum positive potential (797.23mV). Hence, the properties of these films may directly pertain to the bit readout signal and reliability of charge storage and memory applications. © 2017 Elsevier B.V. | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Influence of oxygen vacancies on surface charge potential and transportation properties of Al-doped ZnO nanostructures produced via atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jallcom.2017.03.133 | - |
dc.identifier.scopusid | 2-s2.0-85016158876 | - |
dc.identifier.bibliographicCitation | Journal of Alloys and Compounds, v.709, pp.819 - 828 | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Al-doped ZnO | - |
dc.subject.keywordAuthor | Surface charge potential | - |
dc.subject.keywordAuthor | Kelvin probe method | - |
dc.subject.keywordAuthor | Transportation properties | - |
dc.subject.keywordPlus | Al Doped ZnO | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Annealing | - |
dc.subject.keywordPlus | Atomic Force Microscopy (AFM) | - |
dc.subject.keywordPlus | Atomic Layer Deposition (ALD) | - |
dc.subject.keywordPlus | Charge Potentials | - |
dc.subject.keywordPlus | Charge Transportation | - |
dc.subject.keywordPlus | Defect Density | - |
dc.subject.keywordPlus | Deposition | - |
dc.subject.keywordPlus | Devices | - |
dc.subject.keywordPlus | Doping Concentration | - |
dc.subject.keywordPlus | Electrical Properties | - |
dc.subject.keywordPlus | Gel Method | - |
dc.subject.keywordPlus | Kelvin Probe Method | - |
dc.subject.keywordPlus | Optical Films | - |
dc.subject.keywordPlus | Oxygen | - |
dc.subject.keywordPlus | Oxygen Vacancies | - |
dc.subject.keywordPlus | Photoelectron Spectroscopy | - |
dc.subject.keywordPlus | Post Annealing Treatment | - |
dc.subject.keywordPlus | Probes | - |
dc.subject.keywordPlus | Pulsed Laser Deposition | - |
dc.subject.keywordPlus | Semiconductor Doping | - |
dc.subject.keywordPlus | Solar Cell Application | - |
dc.subject.keywordPlus | Surface Charge | - |
dc.subject.keywordPlus | Surface Charge Potential | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Transparent | - |
dc.subject.keywordPlus | Transportation Properties | - |
dc.subject.keywordPlus | X Ray Photoelectron Spectrometries | - |
dc.subject.keywordPlus | X Ray Photoelectron Spectroscopy (XPS) | - |
dc.subject.keywordPlus | Zinc Oxide (ZnO) Films | - |
dc.subject.keywordPlus | Zinc Oxide (ZnO) | - |
dc.citation.endPage | 828 | - |
dc.citation.startPage | 819 | - |
dc.citation.title | Journal of Alloys and Compounds | - |
dc.citation.volume | 709 | - |
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