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Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell
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dc.contributor.author Minbashi, Mehran -
dc.contributor.author Omrani, Mir Kazem -
dc.contributor.author Memarian, Nafiseh -
dc.contributor.author Kim, Dae-Hwan -
dc.date.accessioned 2018-01-25T01:06:46Z -
dc.date.available 2018-01-25T01:06:46Z -
dc.date.created 2017-08-09 -
dc.date.issued 2017-10 -
dc.identifier.issn 1567-1739 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/5041 -
dc.description.abstract The simulation of CZTSSe solar cells is presented in this paper. The simulation results are in reasonable agreement with the experimental data, indicating the reliability of simulation results. New structure is proposed to increase the functionality of the cell. Improved functional performances are achieved by inserting a P-Silicon (P-Si) layer as back surface field. Simulation results suggest that by inserting this P-Si layer, efficiency of the CZTSSe solar cell increases from 12.6% to 16.59%, which is a significant improvement. For the champion cell JSC = 36.27 mA/cm2, VOC = 0.625 V and FF = 73.11% has been achieved. © 2017 Elsevier B.V. -
dc.publisher 한국물리학회 -
dc.title Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell -
dc.type Article -
dc.identifier.doi 10.1016/j.cap.2017.06.003 -
dc.identifier.wosid 000407660900003 -
dc.identifier.scopusid 2-s2.0-85020866989 -
dc.identifier.bibliographicCitation Minbashi, Mehran. (2017-10). Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell. Current Applied Physics, 17(10), 1238–1243. doi: 10.1016/j.cap.2017.06.003 -
dc.identifier.kciid ART002252199 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor CZTSSe solar cells -
dc.subject.keywordAuthor Simulation -
dc.subject.keywordAuthor Back surface field -
dc.subject.keywordAuthor P-type silicon -
dc.subject.keywordAuthor S/(S plus Se)weight ratio -
dc.subject.keywordPlus THIN-FILMS -
dc.subject.keywordPlus CU2ZNSNS4 -
dc.subject.keywordPlus PERFORMANCE -
dc.subject.keywordPlus SIMULATION -
dc.citation.endPage 1243 -
dc.citation.number 10 -
dc.citation.startPage 1238 -
dc.citation.title Current Applied Physics -
dc.citation.volume 17 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.description.journalRegisteredClass kci -
dc.relation.journalResearchArea Materials Science; Physics -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied -
dc.type.docType Article -
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김대환
Kim, Dae-Hwan김대환

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