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Effective control over near band-edge emission in ZnO/CuO multilayered films
- Effective control over near band-edge emission in ZnO/CuO multilayered films
- Allabergenov, Bunyod; Shaislamov, Ulugbek; Shim, Hyun Seok; Lee, Myeong Jae; Matnazarov, Anvar; Choi, Byeong Dae
- DGIST Authors
- Lee, Myeong Jae; Choi, Byeong Dae
- Issue Date
- Optical Materials Express, 7(2), 494-502
- Article Type
- Amorphous Films; Copper; Copper Oxides; Crystallographic Defects; Effective Doping; Emission Properties; High Resolution Transmission Electron Microscopy; Laser Radiation; Laser Technique; Micro-Structural; Multi-Layered Films; Near Band Edge Emissions; Optical Properties; Photo-Luminescent Properties; Photoluminescence Spectroscopy; Semiconductor Doping; Thin-Films; Transmission Electron Microscopy; Zinc Oxide
- We report on a study of the microstructural and photoluminescent properties of ZnO/CuO multilayered films. Multilayered ZnO/CuO thin films were deposited on amorphous SiO2/Si substrates by a pulsed laser technique and their microstructural and optical properties were characterized by transmission electron microscopy (TEM) and photoluminescence spectroscopy. TEM and XRD analyses of annealed ZnO/CuO films reveal the formation of multiple crystallographic defects and modification of the dominant growth plane, indicating effective doping of Cu atoms into the ZnO lattice. Consequently, near-band-edge emission in ZnO can be controlled through the number of CuO layers. Redshift of the near-band-edge emission peak from 385 nm up to 422 nm is achieved by increasing the number of CuO layers up to a certain number, above which a downward shift is observed. The results demonstrate that the emission properties of ZnO can be modified and precisely controlled by incorporation of CuO thin layers as a Cu-doping source. © 2017 Optical Society of America.
- OSA - The Optical Society
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- Intelligent Devices and Systems Research Group1. Journal Articles
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