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dc.contributor.author Kim, Youngjae -
dc.contributor.author Yun, Won Seok -
dc.contributor.author Lee, J. D. -
dc.date.accessioned 2018-01-25T01:07:46Z -
dc.date.available 2018-01-25T01:07:46Z -
dc.date.created 2017-04-10 -
dc.date.issued 2016-09 -
dc.identifier.issn 2045-2322 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/5082 -
dc.description.abstract Functionalized X-Bi bilayers (X = Ga, In, and Tl) with halogens bonded on their both sides have been recently claimed to be the giant topological insulators due to the strong band inversion strengths. Employing the first-principles electronic structure calculation, we find the topological band order transition from the order p-p-s of the X-Bi bilayers with halogens on their both sides to the new order p-s-p of the bilayers (especially for X = Ga and In) with halogen on one side and hydrogen on the other side, where the asymmetric hydrogen bonding simulates the substrate. We further find that the p-s bulk band gap of the bilayer bearing the new order p-s-p sensitively depends on the electric field, which enables a meaningful engineering of the quantum spin Hall edge state by controlling the external electric field. © 2016 The Author(s). -
dc.publisher Nature Publishing Group -
dc.title Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer -
dc.type Article -
dc.identifier.doi 10.1038/srep33395 -
dc.identifier.scopusid 2-s2.0-84988377987 -
dc.identifier.bibliographicCitation Scientific Reports, v.6, pp.33395 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus INSULATORS -
dc.subject.keywordPlus SURFACE -
dc.citation.startPage 33395 -
dc.citation.title Scientific Reports -
dc.citation.volume 6 -

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