Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Youngjae | - |
dc.contributor.author | Yun, Won Seok | - |
dc.contributor.author | Lee, J. D. | - |
dc.date.accessioned | 2018-01-25T01:07:46Z | - |
dc.date.available | 2018-01-25T01:07:46Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016-09 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5082 | - |
dc.description.abstract | Functionalized X-Bi bilayers (X = Ga, In, and Tl) with halogens bonded on their both sides have been recently claimed to be the giant topological insulators due to the strong band inversion strengths. Employing the first-principles electronic structure calculation, we find the topological band order transition from the order p-p-s of the X-Bi bilayers with halogens on their both sides to the new order p-s-p of the bilayers (especially for X = Ga and In) with halogen on one side and hydrogen on the other side, where the asymmetric hydrogen bonding simulates the substrate. We further find that the p-s bulk band gap of the bilayer bearing the new order p-s-p sensitively depends on the electric field, which enables a meaningful engineering of the quantum spin Hall edge state by controlling the external electric field. © 2016 The Author(s). | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/srep33395 | - |
dc.identifier.scopusid | 2-s2.0-84988377987 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.6, pp.33395 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.citation.startPage | 33395 | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 6 | - |