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Optical and photoelectric properties of Mn-doped ZnS thin film on a flexible indium-tin-oxide/polyethylene terephthalate substrate prepared by pulsed laser deposition
- Optical and photoelectric properties of Mn-doped ZnS thin film on a flexible indium-tin-oxide/polyethylene terephthalate substrate prepared by pulsed laser deposition
- Choi, Byeongdae; Shim, Hyunseok; Allabergenov, Bunyod; Lee, Myoung-Jae
- DGIST Authors
- Choi, Byeongdae; Lee, Myoung-Jae
- Issue Date
- Optical Materials Express, 6(7), 2336-2341
- Article Type
- Deposition; Indium; Indium Tin Oxide; Manganese; Optical Films; Optoelectronic Devices; Oxide Films; Photoelectric Property; Photoelectricity; Photoluminescence Intensities; Plastic Bottles; Pulsed Laser Deposition; Pulsed Lasers; Semiconductor Quantum Wells; Substrate Temperature; Substrates; Terephthalate; Thin-Films; Tin Oxides; UV Irradiation; Wurtzite Phase; Zinc Sulfide; ZnS Thin Films
- Optical and photoelectric properties of Mn-doped ZnS thin films on indium-tin-oxide (ITO)/polyethylene terephthalate (PET) substrates by pulsed laser deposition (PLD) were investigated. The XRD patterns revealed that the thin film deposited at room temperature (RT) had a wurtzite phase, which changed to a sphalerite phase at a substrate temperature of approximately 100°C. The transmittance of the films was approximately 87% in the visible range. The optical bandgap of the film deposited at RT was 3.29 eV, which increased to 3.361 eV with increasing substrate temperature to 200°C. The photoluminescence (PL) intensity at 468 nm and the photocurrent by UV irradiation increased in proportion to the substrate temperature. The present results imply that Mn-doped ZnS films deposited on flexible PET substrates are useful for fabricating flexible optoelectronic devices such as flexible UV detectors. © 2016 Optical Society of America.
- OSA - The Optical Society
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- Intelligent Devices and Systems Research Group1. Journal Articles
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