Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Khan, Firoz | - |
dc.contributor.author | Baek, Seong-Ho | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.date.available | 2018-01-25T01:08:26Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5110 | - |
dc.description.abstract | Simultaneous reduction and doping of the graphene oxide (GO) is an important issue for low temperature processed flexible electronic devices. A low temperature method for reduction and ambipolar doping has been developed which yield the doped reduced GO with wide range of work function with a mass production using tetra-methyl ammonium hydroxide (TMAH). The doping type of obtained reduced GO is tuned with TMAH concentration. XPS analysis revealed that the graphitic N is converted to oxidized N with increase of TMAH concentration. The work function is tuned via wide range variation in the carrier concentration in neutral (rGO-A, 4.46 eV), n-type (rGO-B, 3.90 eV) and p-type (rGO-C, 5.29 eV) regimes. The obtained Dirac voltages of field effect devices are -1 V, -31 V and +35 V with active layer of rGO-A, rGO-B and rGO-C, respectively. The n-type doping is due to incorporation of graphitic N, whereas, oxidized N acts as electron withdrawing group which causes p-type doping. © 2016 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Elsevier Ltd | - |
dc.title | One-step and controllable bipolar doping of reduced graphene oxide using TMAH as reducing agent and doping source for field effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.carbon.2016.01.064 | - |
dc.identifier.scopusid | 2-s2.0-84958213626 | - |
dc.identifier.bibliographicCitation | Carbon, v.100, pp.608 - 616 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | Ammonium Hydroxide | - |
dc.subject.keywordPlus | Carrier Concentration | - |
dc.subject.keywordPlus | CHemICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | Electron Withdrawing Group | - |
dc.subject.keywordPlus | Field-Effect Devices | - |
dc.subject.keywordPlus | Field Effect Transistors | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | Flexible Electronic Devices | - |
dc.subject.keywordPlus | Graphene | - |
dc.subject.keywordPlus | Graphene Transistors | - |
dc.subject.keywordPlus | GRAPHITE OXIDE | - |
dc.subject.keywordPlus | Low Temperature Method | - |
dc.subject.keywordPlus | Low Temperature Production | - |
dc.subject.keywordPlus | Low Temperatures | - |
dc.subject.keywordPlus | NITROGEN-DOPED GRAPHENE | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | Reduced Graphene Oxides | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | SHEETS | - |
dc.subject.keywordPlus | Simultaneous Reduction | - |
dc.subject.keywordPlus | TemPERATURE | - |
dc.subject.keywordPlus | Tetramethyl Ammonium Hydroxide | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | WORK-FUNCTION | - |
dc.subject.keywordPlus | Work Function | - |
dc.citation.endPage | 616 | - |
dc.citation.startPage | 608 | - |
dc.citation.title | Carbon | - |
dc.citation.volume | 100 | - |
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