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Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition

Title
Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition
Authors
Choi, Yong-SeokHwang, Dae-KueKwon, Bong-JoonKang, Jang-WonCho, Yong-HoonPark, Seong-Ju
DGIST Authors
Hwang, Dae-Kue
Issue Date
2011-10
Citation
Japanese Journal of Applied Physics, 50(10)
Type
Article
Article Type
Article
Keywords
Atomic Force MicroscopyEpitaxial FilmsEpitaxial GrowthExcitonic EmissionExcitonsFilm GrowthFlat TerracesFree-Exciton EmissionsGas RatioLongitudinal Optical PhononsLow Temperature PhotoluminescenceMetallic FilmsMetallorganic Chemical Vapor DepositionNeutral DonorOptical QualitiesPhotoluminescenceRoot Mean Square RoughnessZinc OxideZnOZnO Films
ISSN
0021-4922
Abstract
We report the effect of the VI/II ratio on the metalorganic chemical vapor deposition (MOCVD) growth of ZnO film. The surface of ZnO film becomes very smooth as the VI/II ratio increases. Atomic force microscopy measurement shows that ZnO films grown at a VI/II ratio of 25,000 have atomically flat terraces with a root-mean-square roughness of 0.2 nm. Low-temperature photoluminescence spectra also reveal a very sharp excitonic emission comprised of a neutral donor bound exciton emission and a free exciton emission with first and second longitudinal optical (LO) phonon replicas, indicating that the ZnO epilayer is of a high optical quality. © 2011 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/5385
DOI
10.1143/JJAP.50.105502
Publisher
Institute of Physics Publishing
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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