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Significant Enhancement in the Thermoelectric Performance of a Bismuth Telluride Nanocompound through Brief Fabrication Procedures
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dc.contributor.author Kim, Cham -
dc.contributor.author Kim, Dong Hwan -
dc.contributor.author Kim, Hoyoung -
dc.contributor.author Chung, Jong Shik -
dc.date.accessioned 2024-03-15T16:15:50Z -
dc.date.available 2024-03-15T16:15:50Z -
dc.date.created 2017-04-10 -
dc.date.issued 2012-06 -
dc.identifier.issn 1944-8244 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/56382 -
dc.description.abstract A binary BiTe nanocompound for thermoelectric applications was prepared via a water-based chemical reaction under atmospheric conditions. We attempted to increase the carrier mobility of the nanocompound by adopting a post-thermal treatment consisting of calcination and reduction at different temperatures. We also tried to control the carrier density of the compound by adjusting the stoichiometry of the atomic constituents. We measured other transport properties (i.e., electrical resistivity, Seebeck coefficient, and thermal conductivity) and observed how these properties were affected by both the carrier mobility and the carrier density. We derived the thermoelectric performance, as captured by the figure of merit (ZT), from the transport properties and discussed the effect of such properties on the ZT value. The nanocompound exhibited a very competent ZT value (0.91 at 100 °C), which is one of the best thermoelectric performances of chemically synthesized BiTe materials. © 2012 American Chemical Society. -
dc.language English -
dc.publisher American Chemical Society -
dc.title Significant Enhancement in the Thermoelectric Performance of a Bismuth Telluride Nanocompound through Brief Fabrication Procedures -
dc.type Article -
dc.identifier.doi 10.1021/am3002764 -
dc.identifier.wosid 000305716900020 -
dc.identifier.scopusid 2-s2.0-84863197997 -
dc.identifier.bibliographicCitation Kim, Cham. (2012-06). Significant Enhancement in the Thermoelectric Performance of a Bismuth Telluride Nanocompound through Brief Fabrication Procedures. ACS Applied Materials & Interfaces, 4(6), 2949–2954. doi: 10.1021/am3002764 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor thermoelectric materials -
dc.subject.keywordAuthor ZT -
dc.subject.keywordAuthor chemical synthesis -
dc.subject.keywordAuthor nanostructures -
dc.subject.keywordAuthor bismuth telluride -
dc.subject.keywordPlus PHONON-GLASS -
dc.subject.keywordPlus THERMAL-PROPERTIES -
dc.subject.keywordPlus BI2TE3 -
dc.subject.keywordPlus FIGURE -
dc.citation.endPage 2954 -
dc.citation.number 6 -
dc.citation.startPage 2949 -
dc.citation.title ACS Applied Materials & Interfaces -
dc.citation.volume 4 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.type.docType Article -
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김참
Kim, Cham김참

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