Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition
- Title
- Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition
- Author(s)
- Choi, Yong-Seok ; Hwang, Dae-Kue ; Kwon, Bong-Joon ; Kang, Jang-Won ; Cho, Yong-Hoon ; Park, Seong-Ju
- Issued Date
- 2011-10
- Citation
- Japanese Journal of Applied Physics, v.50, no.10
- Type
- Article
- Keywords
- Atomic Force Microscopy ; DEVICES ; emISSION ; Epitaxial Films ; Epitaxial Growth ; Excitonic emission ; Excitons ; Film Growth ; Flat Terraces ; Free-Exciton emissions ; Gas Ratio ; LIGHT-emITTING-DIODES ; Longitudinal Optical Phonons ; Low Temperature Photoluminescence ; Metallic Films ; Metallorganic Chemical Vapor Deposition ; MOCVD ; Neutral Donor ; Optical Qualities ; PHOTOLUMINESCENCE ; Root Mean Square Roughness ; THIN-FILMS ; Zinc Oxide ; ZnO ; ZnO Films
- ISSN
- 0021-4922
- Abstract
- We report the effect of the VI/II ratio on the metalorganic chemical vapor deposition (MOCVD) growth of ZnO film. The surface of ZnO film becomes very smooth as the VI/II ratio increases. Atomic force microscopy measurement shows that ZnO films grown at a VI/II ratio of 25,000 have atomically flat terraces with a root-mean-square roughness of 0.2 nm. Low-temperature photoluminescence spectra also reveal a very sharp excitonic emission comprised of a neutral donor bound exciton emission and a free exciton emission with first and second longitudinal optical (LO) phonon replicas, indicating that the ZnO epilayer is of a high optical quality. © 2011 The Japan Society of Applied Physics.
- Publisher
- Institute of Physics Publishing
- Related Researcher
-
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Hwang, Dae-Kue 에너지환경연구부
- Research Interests
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- Appears in Collections:
- Division of Energy Technology 1. Journal Articles
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