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dc.contributor.author Kim, Dohun -
dc.contributor.author Kim, Soyun -
dc.contributor.author Cho, Yanni -
dc.contributor.author Lee, Jaesung -
dc.contributor.author Watanabe, Kenji -
dc.contributor.author Taniguchi, Takashi -
dc.contributor.author Jung, Minkyung -
dc.contributor.author Falson, Joseph -
dc.contributor.author Kim, Youngwook -
dc.date.accessioned 2024-04-15T09:10:13Z -
dc.date.available 2024-04-15T09:10:13Z -
dc.date.created 2024-02-20 -
dc.date.issued 2024-03 -
dc.identifier.issn 1567-1739 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/56556 -
dc.description.abstract We present a novel flipping transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and solvents. Here, we utilize commercially available gel film and control its stickiness through oxygen plasma and UV-Ozone treatment, also effectively removing residues from the gel film surface. The cleanliness of the surface is verified through atomic force microscopy. We investigate the quality of our fabricated devices using magnetotransport measurements on graphene/hBN and graphene/α-RuCl3 heterostructures. Remarkably, graphene/hBN devices produced with the flipping method display quality similar to that of fully encapsulated devices. This is evidenced by the presence of a symmetry-broken state at 1 T. Additionally, features of the Hofstadter butterfly were also observed in the second devices. In the case of graphene/α-RuCl3, we observe quantum oscillations with a beating mode and two-channel conduction, consistent with fully encapsulated devices. © 2023 Korean Physical Society -
dc.language English -
dc.publisher Elsevier -
dc.title Full-dry flipping transfer method for van der waals heterostructure -
dc.type Article -
dc.identifier.doi 10.1016/j.cap.2023.10.018 -
dc.identifier.wosid 001174075500001 -
dc.identifier.scopusid 2-s2.0-85183321682 -
dc.identifier.bibliographicCitation Kim, Dohun. (2024-03). Full-dry flipping transfer method for van der waals heterostructure. Current Applied Physics, 59, 165–168. doi: 10.1016/j.cap.2023.10.018 -
dc.identifier.kciid ART003063811 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus DIRAC FERMIONS -
dc.subject.keywordPlus MOIRE -
dc.subject.keywordPlus SUPERCONDUCTIVITY -
dc.subject.keywordPlus STATES -
dc.citation.endPage 168 -
dc.citation.startPage 165 -
dc.citation.title Current Applied Physics -
dc.citation.volume 59 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.description.journalRegisteredClass kci -
dc.relation.journalResearchArea Materials Science; Physics -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied -
dc.type.docType Article -
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