Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Allabergenov, Bunyod | - |
dc.contributor.author | Yun, Sanghun | - |
dc.contributor.author | Kutliev, Uchkun | - |
dc.contributor.author | Choi, Byeongdae | - |
dc.date.accessioned | 2024-06-13T14:10:14Z | - |
dc.date.available | 2024-06-13T14:10:14Z | - |
dc.date.created | 2024-03-28 | - |
dc.date.issued | 2024-02 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/56637 | - |
dc.description.abstract | Herein, we present the electrical, structural, and optical characteristics of pristine VO2, VO2/TiO2, and TiO2/VO2/TiO2 thin films deposited on a conventional glass substrate via magnetron sputtering. To obtain a crystallized structure, the as-deposited films were annealed in a tube furnace at 450 and 550 °C in an oxygen atmosphere at 20-25 mTorr for 90 min. The prepared films were characterized by four-point probe resistivity, X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet-visible-near-infrared spectrophotometry, and field-emission transmission electron microscopy. The microstructural analyses revealed that using TiO2 as a buffer and the TiO2/VO2/TiO2 sandwich structure contributed to the improvement in VO2 crystallinity. In particular, the (011) diffraction peak parameters of VO2, such as crystallite size, increased when the d-spacing and microstrain of the films decreased. The atomic fraction of the VO2 phase in the TiO2/VO2/TiO2 sample increased from 11 to 19 at. % after annealing at 450 °C. In addition, the multilayer film exhibited relatively increased optical transmittance near the infrared region and showed a reduction in the hysteresis loop width (HLW) from 21 to 10 °C at a transition temperature of 65 °C in relation to those of pure VO2 and bilayer VO2/TiO2 films. Upon increasing the annealing temperature to 550 °C, the bilayer film showed the highest temperature-dependent infrared transmittance variation (ΔTIR) of ∼37% at a wavelength of 2000 nm. In addition, the TiO2/VO2/TiO2 sample showed the lowest HLW (3 °C) with a ΔTIR of ∼30%. The direct film fabrication on conventional glass substrates, relatively low HLW, and increase in optical transmittance in the near-infrared region can contribute to the production of cost-effective, fine-tuned, energy-saving smart windows and infrared switches. © 2024 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Highly Reduced Phase Transition Hysteresis of Vanadium Dioxide Thin Films in Multilayer Structure with Titanium Dioxide | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsaelm.3c01784 | - |
dc.identifier.wosid | 001179570700001 | - |
dc.identifier.scopusid | 2-s2.0-85186396994 | - |
dc.identifier.bibliographicCitation | ACS Applied Electronic Materials, v.6, no.3, pp.1886 - 1893 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | vanadium dioxide thin film | - |
dc.subject.keywordAuthor | thermochromism | - |
dc.subject.keywordAuthor | titanium dioxide | - |
dc.subject.keywordAuthor | multiple layers | - |
dc.subject.keywordAuthor | sputtering | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | VO2 | - |
dc.subject.keywordPlus | WINDOW | - |
dc.subject.keywordPlus | TRANSMITTANCE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | LAYER | - |
dc.citation.endPage | 1893 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1886 | - |
dc.citation.title | ACS Applied Electronic Materials | - |
dc.citation.volume | 6 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering; Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary | - |
dc.type.docType | Article | - |
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