Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field

Abstract

To overcome memory bottleneck issues in memory-centric chip technologies, in-memory computing has been considered an alternative route involving simultaneous data storage and computing in a memory network. In the context of spintronics, a memory-in-logic device based on spin-transfer-torque or spin-orbit-torque magnetoresistive random-access memory, and a magnetic domain wall (DW) racetrack has been studied. To expand the functionalities of a conventional magnetic DW racetrack, the study devises a reprogrammable exchange-biased DW racetrack with local engineering of the exchange bias field (HE) in continuous magnetic films without requiring a lithography process for specific patterning of the films. Furthermore, current-driven and field-driven DW motion along the exchange-biased racetrack is demonstrated. Additionally, within the route of the locally different exchange-biased racetrack, a gate function can be performed to guide or stop DW motion by locally tuning HE. The complex maze racetrack is rewritable, and multiple input channels can be controlled. © 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.