WEB OF SCIENCE
SCOPUS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 서정필 | - |
| dc.contributor.author | Younghyun Kim | - |
| dc.date.accessioned | 2025-02-28T21:02:39Z | - |
| dc.date.available | 2025-02-28T21:02:39Z | - |
| dc.date.issued | 2025 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/58061 | - |
| dc.identifier.uri | http://dgist.dcollection.net/common/orgView/200000840960 | - |
| dc.description | InAs nanowire, quantum dot | - |
| dc.description.tableofcontents | List of Contents Abstract i List of contents ii List of figures V Ⅰ. Theoretical Background 1.1 Su-Schrieffer-Heeger (SSH) model 3 1.2 Quantum dots 10 1.2.1 Indium Arsenide (InAs) nanowire single-electron transistor 10 1.2.2 Single quantum dot 11 1.2.3 Double quantum dot 14 1.2.4 Quadruple quantum dot 19 1.3 Superconducting coplanar waveguide (SCPW) resonators 21 1.3.1 Microwave theory of transmission lines 22 1.3.2 Superconducting microwave resonators 24 1.3.3 Norton equivalent circuit 26 1.3.4 Quality factors of the resonator 28 1.3.5 Transmission coefficient 30 II. Fabrication 2.1 InAs nanowire single-electron transistor 32 2.1.1 Nanowire transfer and etching process 32 2.1.2 DC Device Fabrication 34 2.2 Nb Superconducting coplanar waveguide (SCPW) resonator 35 2.2.1 Coplanar waveguide resonator geometry 35 2.2.2 RF Device Fabrication 36 III. Measurement Techniques 3.1 Initial Characterization and Sample Preparation 39 3.2 Measurement Schematic 41 3.3 Low Temperature Measurement Setup 42 3.4 He-3 Refrigeration System 44 IV. Experiments Results 4.1 Multi-quantum dot (DC Device) Results 46 4.1.1 Single quantum dots 46 4.1.2 Double quantum dots 49 4.1.3 Triple quantum dot 51 4.1.4 Quadruple quantum dot 53 4.2 SCPW resonator (RF Device) Results 59 4.2.1 Characteristics of the RF Device 59 4.2.2 Interaction between the transistor and the resonator 62 V. Summary and Conclusion 64 Bibliography 65 Appendix Fabrication Details and Recipes A1. Wafer Characteristics of DC device A2. Photo pad Fabrication A3. Wafer Characteristics of RF device A4. Resonator fabrication for measurements A5. InAs transistor fabrication (DC & RF device) A6. Designing using K-Layout and Layout Editor Pre-Cooldown Sample Preparation B1. Wire bonding B2. He-3 Sample Exchange Procedure (Unloading and loading Sample) Korean Summary 80 |
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| dc.format.extent | 80 | - |
| dc.language | eng | - |
| dc.publisher | DGIST | - |
| dc.title | Tunable multi-quantum dots in InAs nanowires: Building Blocks for Su-Schrieffer-Heeger Topological Chains | - |
| dc.title.alternative | InAs 나노와이어의 조정 가능한 다중 양자점: Su-Schrieffer-Heeger 위상적 사슬을 위한 기초 구성 요소 | - |
| dc.type | Thesis | - |
| dc.identifier.doi | 10.22677/THESIS.200000840960 | - |
| dc.description.degree | Master | - |
| dc.contributor.department | Department of Physics and Chemistry | - |
| dc.identifier.bibliographicCitation | Younghyun Kim. (2025). Tunable multi-quantum dots in InAs nanowires: Building Blocks for Su-Schrieffer-Heeger Topological Chains. doi: 10.22677/THESIS.200000840960 | - |
| dc.contributor.coadvisor | Minkyung Jung | - |
| dc.date.awarded | 2025-02-01 | - |
| dc.publisher.location | Daegu | - |
| dc.description.database | dCollection | - |
| dc.citation | XT.MM 김64 202502 | - |
| dc.date.accepted | 2025-01-20 | - |
| dc.contributor.alternativeDepartment | 화학물리학과 | - |
| dc.subject.keyword | InAs nanowire, quantum dot | - |
| dc.contributor.affiliatedAuthor | Younghyun Kim | - |
| dc.contributor.affiliatedAuthor | Jungpil Seo | - |
| dc.contributor.affiliatedAuthor | Minkyung Jung | - |
| dc.contributor.alternativeName | 김영현 | - |
| dc.contributor.alternativeName | Jungpil Seo | - |
| dc.contributor.alternativeName | 정민경 | - |
| dc.rights.embargoReleaseDate | 2028-02-28 | - |
