Growth of SiC nanostructures via mixed-source hydride vapor-phase epitaxy method

Abstract

SiC nanostructures are stable without raw material loss even in high-temperature and extreme environments. Thus, they have applications in power semiconductors, optoelectronic devices, and secondary batteries. In this study, SiC nanostructures were grown via the mixed-source hydride vapor-phase epitaxy method with Si and graphite sources, and the growth mechanism was elucidated. The SiC nanostructures primarily grew between the SiC substrate and the graphite source, whereas carbon nanostructures grew on the surface of the graphite source. The properties of the SiC nanostructures grown in this study were characterized using field-emission scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, X-raydiffraction, and high-resolution transmission electron microscopy. The d-spacing between two adjacent lattice fringes was 0.25 nm, which is in good agreement with the interplanar spacing in the (111) or (102) plane directions of SiC. Moreover, the applicability of SiC nanostructures was evaluated by applying the material, which coexists with carbon nanostructures, as an anode in a lithium-ion battery. © 2025, Hanyang University. All rights reserved.