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Dirac nodal line and pseudo-gap in 1T-VS2 single crystal
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Title
Dirac nodal line and pseudo-gap in 1T-VS2 single crystal
Issued Date
2025-09
Citation
Kim, Mincheol. (2025-09). Dirac nodal line and pseudo-gap in 1T-VS2 single crystal. Current Applied Physics, 77, 94–99. doi: 10.1016/j.cap.2025.06.005
Type
Article
Author Keywords
Transition metal dichalcogenideVanadium disulfideTopological Dirac nodal lineCharge-density waveAngle-resolved photoemission spectroscopy
ISSN
1567-1739
Abstract
Vanadium disulfide (VS2), one of transition metal dichalcogenide (TMDC) family, attracts elevated interests for its charge-density wave phase transition, ferromagnetism, optoelectronic switching, and catalytic reactivity, but the topological Dirac surface states have not been observed yet. Here we report the Dirac nodal line states of VS2 single crystals via angle-resolved photoemission spectroscopy (ARPES) measurements. ARPES analysis reveals that Dirac nodal line surface states are extended from the Μ point toward the Γ point with energy of −1.1 eV. Comparison with the other vanadium chalcogenides shows monotonic energy shift of the Dirac states depending on the spin-orbit coupling strength of the chalcogen atoms. Furthermore, we studied the temperature-dependence of pseudo gaps near both the M and Γ points. Our observations provide experimental evidence of topological electronic structures, contributing to the understanding of the correlated TMDC systems and their potential in switching devices, optical saturable absorber, and electrocatalysis. © 2025 Korean Physical Society
URI
https://scholar.dgist.ac.kr/handle/20.500.11750/58551
DOI
10.1016/j.cap.2025.06.005
Publisher
Elsevier
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