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Influence of Surface Ligands on the Performance of HgTe Quantum Dots-Based Photodetectors

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Title
Influence of Surface Ligands on the Performance of HgTe Quantum Dots-Based Photodetectors
Alternative Title
표면 리간드에 따른 수은 텔루륨 양자점 기반 광검출기 성능 변화
DGIST Authors
Jihoo SoJong-Soo LeeHyun-Soo Ra
Advisor
이종수
Co-Advisor(s)
Hyun-Soo Ra
Issued Date
2026
Awarded Date
2026-02-01
Type
Thesis
Description
Quantum-Dots, Mercury Telluride, Photodetectors, Short-Wave-Infrared, Ligands, Photodiode
Table Of Contents
Ⅰ. Introduction 1

Ⅱ. Background 4
2.1 Quantum Dots (QDs) 4
2.1.1 Quantum Confinement Effect 4
2.1.2 Structure of QDs 5
2.1.3 Short-Wavelength-Infrared (SWIR) QDs 8
2.1.4 Ligand Engineering 9
2.2 Carrier Transport in QD Films 11
2.2.1 Hopping 11
2.2.2 Trap Assisted Transport 13
2.2.3 Band-like Transport 14
2.3 Photodetectors 15
2.3.1 Photoconductor 16
2.3.2 Phototransistor 17
2.3.3 Photodiode 18

Ⅲ. Experiment 24
3.1 Materials 24
3.2 HgTe QDs 24
3.3 Ligands 26
3.4 Zinc Oxide Sol-Gel Solution 27
3.5 Photodiode Fabrication 27

Ⅳ. Results 29
4.1 Photodide Performance 29
4.2 Film Characteristic 34
4.3 Device Characteristic 37
4.4 Stability 41

Ⅴ. Conclusion 43

Reference 44
URI
https://scholar.dgist.ac.kr/handle/20.500.11750/59684
http://dgist.dcollection.net/common/orgView/200000942231
DOI
10.22677/THESIS.200000942231
Degree
Master
Department
Department of Energy Science and Engineering
Publisher
DGIST
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