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  Department of Physics and Chemistry Theses Master

Inorganic Material–Based Stretchable and Breathable Schottky Diodes for Wearable High-Frequency Electronics

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dc.contributor.advisor 이성원 -
dc.contributor.author Sieun Hwang -
dc.date.accessioned 2026-01-23T10:57:59Z -
dc.date.available 2026-01-23T10:57:59Z -
dc.date.issued 2026 -
dc.identifier.uri https://scholar.dgist.ac.kr/handle/20.500.11750/59748 -
dc.identifier.uri http://dgist.dcollection.net/common/orgView/200000946389 -
dc.description Nanomesh-based device, E-skin device, Wearable device, Schottky diodes, High frequency rectifier -
dc.description.tableofcontents Ⅰ. Introduction 1
1.1 Introduction of nanomesh based wearable electronics 1
1.1.1 Development of wearable devices 1
1.1.2 Required mechanical properties for wearable skin devices 2
1.1.3 Nanomesh-based wearable devices, A unified solution to E-Skin 4
1.2 Introduction of wireless technologies for wearable electronics 6
1.2.1 Enabling Wireless Wearables, Challenging Power 6
1.2.2 NFC and RFID: Coupled Data Transfer and Power Delivery 7
1.3 The role of Schottky diodes as rectifiers for wearable electronics 8
1.3.1 The role of Schottky Diode in wearable electronics 8
1.3.2 Characteristics of Schottky Diode 8
1.3.3 High-Frequency Operation of Schottky Diodes 11
1.3.4 Recent Advances and Limitations in HF Stretchable Schottky Diodes 12

Ⅱ. Experimental Procedure 13
2.1 Fabrication method 13
2.1.1 Fabrication of stretchable polymer nanomesh and bottom electrode 14
2.1.2 Fabrication of double-shell semiconductor (CuO/Cu2O) stack 15
2.1.3 Anodization synthesis of CuO arrays 15
2.1.4 Heat lamination of cathode/semiconductor/anode stack 16
2.2 Characterization and Measurements 16

Ⅲ. Result & Discussion 17
3.1 Microstructure and Crystal Structure of Schottky diode 17
3.1.1 Surface morphology 17
3.1.2 Crystal Structure 18
3.1.3 Anodization-Induced Phase evolution 19
3.2 Device-Level Performance 22
3.2.1 J-V Rectification 22
3.2.2 Stretchability 23
3.2.3 Environmental and Operational Stability 25
3.2.4 Breathability 27
3.2.5 High-Frequency Response 29

ⅠV. Conclusion 31		 -
dc.format.extent 36 -
dc.language eng -
dc.publisher DGIST -
dc.title Inorganic Material–Based Stretchable and Breathable Schottky Diodes for Wearable High-Frequency Electronics -
dc.title.alternative 웨어러블 고주파 전자기기를 위한 무기 소재 기반 신축성과 통기성을 가진 쇼트키 다이오드 -
dc.type Thesis -
dc.identifier.doi 10.22677/THESIS.200000946389 -
dc.description.degree Master -
dc.contributor.department Department of Physics and Chemistry -
dc.date.awarded 2026-02-01 -
dc.publisher.location Daegu -
dc.description.database dCollection -
dc.citation XT.MM 황58 202602 -
dc.date.accepted 2026-01-19 -
dc.contributor.alternativeDepartment 화학물리학과 -
dc.subject.keyword Nanomesh-based device, E-skin device, Wearable device, Schottky diodes, High frequency rectifier -
dc.contributor.affiliatedAuthor Sieun Hwang -
dc.contributor.affiliatedAuthor Sungwon Lee -
dc.contributor.alternativeName 황시은 -
dc.contributor.alternativeName Sungwon Lee -
dc.rights.embargoReleaseDate 2029-02-28 -
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