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Title
Ultra-Sensitive Short-Wave Infrared Organic Photodetectors Enabled by a π-Conjugation Extended Proquinoid Electron Acceptor
Issued Date
2026-01
Citation
Advanced Functional Materials, v.36, no.5
Type
Article
Author Keywords
bulk-heterojunctionnon-fullerene acceptororganic photodetectorproquinoidshort-wave infrared region
Keywords
CHARGE-TRANSPORTOPEN-SHELLBAND-GAPPOLYMERSPERFORMANCESTATE
ISSN
1616-301X
Abstract

Short-wavelength infrared (SWIR) light detection technologies have attracted considerable attention due to their broad applications in bioimaging, sensing, and optical communication. Despite this promise, achieving high-performance organic SWIR photodetectors (SWIR OPDs) remains a major challenge due to intrinsically weak photoresponse and sensitivity in this spectral region. Herein, a novel proquinoid-type non-fullerene acceptor (NFA), denoted as TQC-4Cl is reported, which exhibits an ultra-narrow band gap of 1.01 eV and a broad spectral response extending beyond 1200 nm, enabled via an aromatic-quinoid transformation strategy. Thermal annealing of the TQC-4Cl film significantly enhanced crystallinity and molecular ordering. Consequently, the optimized TQC-4Cl-based SWIR OPDs exhibit an exceptionally low dark current density (J d) of 4.38 x 10-8 A cm-2 , noise current of 466 fA (at 4 Hz), and a high external quantum efficiency (EQE) of 13.66% at 1200 nm at -0.5 V bias, resulting in a shot-noise limited specific detectivity (Dsh*) of 1.06 x 1012 Jones and a noise current-based specific detectivity (Dn*) of 2.84 x 1011 Jones under the same bias conditions. The ideal phase-separated morphology and high crystallinity of the photoactive layer provide the beneficial condition enabling efficient charge extraction, suppressed bimolecular recombination, and reduced energetic disorder. Furthermore, the devices demonstrated long-term operational stability at 85 degrees C, underscoring their superior thermal durability. This study not only marks the advancement toward the realization of highly sensitive and thermally robust SWIR OPDs but also contributes to the rational molecular design strategies for ultra-narrow bandgap organic semiconductors for next-generation optoelectronic devices.

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URI
https://scholar.dgist.ac.kr/handle/20.500.11750/59966
DOI
10.1002/adfm.202517337
Publisher
Wiley
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고서진
Ko, Seo-Jin고서진

Department of Energy Science and Engineering

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